Related papers: Voltage tunable quantum dot array by patterned Ge-…
Quantum dots are small conductive regions in a semiconductor, containing a variable number of electrons (N=1 to 1000) that occupy well defined discrete quantum states. They are often referred to as artificial atoms with the unique property…
Electronic devices that work in the quantum regime often employ hybrid nanostructures to bring about a nonlinear behaviour. The nonlinearity that these can provide has proven to be useful, in particular, for applications in quantum…
The performance and scalability of semiconductor quantum-dot (QD) qubits are limited by electrostatic drift and charge noise that shift operating points and destabilize qubit parameters. As systems expand to large one- and two-dimensional…
Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can become an excellent host material for an entirely new…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
Zero dimensional graphene quantum dots (GQDs) exhibit interesting physical and chemical properties due to the edge effect and quantum confinement. As the number of carbon atoms in edge is more than on basal plane, GQDs are more reactive.…
We investigate an optically driven quantum computer based on electric dipole transitions within coupled single-electron quantum dots. Our quantum register consists of a freestanding n-type pillar containing a series of pair wise coupled…
Magnetic semiconductor quantum dots with a few carriers represent an interesting model system where ferromagnetic interactions can be tuned by voltage. By designing the geometry of a doped quantum dot, one can tailor the anisotropic quantum…
Current superconducting quantum computing platforms face significant scaling challenges, as individual signal lines are required for control of each qubit. This wiring overhead is a result of the low level of integration between control…
We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular…
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double…
Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential for such DC sources. We first demonstrate the…
In order to employ solid state quantum dots as qubits, both a high degree of control over the confinement potential as well as sensitive charge detection are essential. We demonstrate that by combining local anodic oxidation with local…
Quantum thermodynamics is emerging both as a topic of fundamental research and as means to understand and potentially improve the performance of quantum devices. A prominent platform for achieving the necessary manipulation of quantum…
The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…
We report an experimental study of a one-dimensional quintuple-quantum-dot array integrated with two quantum dot charge sensors in an InAs nanowire. The device is studied by measuring double quantum dots formed consecutively in the array…
Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined…
Optically active III-V group semiconductor quantum dots (QDs) are the leading element of the upcoming safe quantum communication. However, the entire electronic and IT infrastructure relies on silicon-based devices, with silicon also…
Semiconductor quantum dots (QDs) have emerged as a premier solid-state platform for the deterministic generation of nonclassical light, offering a compelling pathway toward scalable quantum photonic systems. While single-photon emission…
We present a three-dimensional simulation study of silicon nanowire double quantum dots (DQDs) with leads at T = 2 K, which extends beyond traditional effective mass or quasi-1D and quasi-2D approaches typically applied to bulk or planar…