Related papers: Continuous nucleation switching driven by spin-orb…
We propose a field-free switching mechanism that utilizes two spatially orthogonal spin-orbit torque (SOT) currents. Initially applied simultaneously, one of the currents is subsequently switched off. The superposition of these two currents…
Spin-orbit torque (SOT) in the heavy elements with a large spin-orbit coupling (SOC) has been frequently used to manipulate the magnetic states in spintronic devices. Recent theoretical works have predicted that the surface oxidized light…
Electric field induced spin-orbit torques are the crucial mechanism for electric regulations of antiferromagnetic order. However, the spin-orbit torques in antiferromagnets and the induced spin dynamics remain largely unexplored. In this…
Field-free switching of perpendicular magnetization has been observed in an epitaxial L1$_1$-ordered CoPt/CuPt bilayer and attributed to spin-orbit torque (SOT) arising from the crystallographic $3m$ point group of the interface. Using a…
The spin currents generated by spin-orbit coupling (SOC) in the nonmagnetic metal layer or at the interface with broken inversion symmetry are of particular interest and importance. Here, we have explored the spin current generation…
The application of Magnetic Random-Access Memory (MRAM) in computing-in-memory (CIM) has gained significant attention. However, existing designs often suffer from high energy consumption due to their reliance on complex analog circuits for…
Increasing dampinglike spin-orbit torque (SOT) is both of fundamental importance for enabling new research into spintronics phenomena and also technologically urgent for advancing low-power spin-torque memory, logic, and oscillator devices.…
The manipulation of magnetization via Magnetic torques is one of the most important phenomena in spintronics. In thin films, conventionally, a charge current flowing in a heavy metal is used to generate transverse spin currents and to exert…
Non-volatile memristors offer a salient platform for artificial neural network (ANN), but the integration of different function blocks into one hardware system remains challenging. Here we demonstrate the implementation of brain-like…
Electrical switching of magnetization via spin-orbit torque (SOT) is of great potential in fast, dense, energy-efficient nonvolatile magnetic memory and logic technologies. Recently, enormous efforts have been stimulated to investigate…
The rapid growth of brain-inspired computing coupled with the inefficiencies in the CMOS implementations of neuromrphic systems has led to intense exploration of efficient hardware implementations of the functional units of the brain,…
Field-free switching of perpendicularly magnetized ferromagnetic layer by spin orbit torque (SOT) from the spin Hall effect (SHE) is of great interest in the applications of magnetic memory devices. In this paper, we investigate the…
Spin-orbit torque (SOT) refers to the excitation of magnetization dynamics via spin-orbit coupling under the application of a charged current. In this work, we introduce a simple and intuitive description of the SOT in terms of spin force.…
Recent studies rediscovered the crucial role of field-like spin orbit torque (SOT) in nanosecond-timescale SOT dynamics. However, there is not yet an effective way to control its relative amplitude. Here, we experimentally modulate the…
Spin-orbit torque facilitates efficient magnetization switching via an in-plane current in perpendicularly magnetized heavy metal/ferromagnet heterostructures. The efficiency of spin-orbit-torque-induced switching is determined by the…
Analog electronic non-volatile memories mimicking synaptic operations are being explored for the implementation of neuromorphic computing systems. Compound synapses consisting of ensembles of stochastic binary elements are alternatives to…
Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into…
We show that by illuminating an InGaAs/GaAs self-assembled quantum dot with circularly polarized light, the nuclei of atoms constituting the dot can be driven into a bistable regime, in which either a threshold-like enhancement or reduction…
Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same…
Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of…