Related papers: Picosecond Switching of Optomagnetic Tunnel Juncti…
The conversion of spin information into electrical signals is indispensable for spintronic technologies. Spin-to-charge conversion in ferromagnetic tunnel contacts is well-described using linear (spin-)transport equations, provided that…
Superparamagnetic tunnel junctions (sMTJs) are emerging as promising components for stochastic units in neuromorphic computing, owing to their tunable random switching behavior. Conventional MTJ control methods, such as spin-transfer torque…
Bio-inspired hardware holds the promise of low-energy, intelligent and highly adaptable computing systems. Applications span from automatic classification for big data management, through unmanned vehicle control, to control for bio-medical…
Optical orientation is a highly efficient tool for the generation of nonequilibrium spin polarization in semiconductors. Combined with spin-polarized transport it offers new functionalities for conventional electronic devices, such as pn…
Ferroelectric tunnel junctions (FTJs) harness the unique combination of ferroelectricity and quantum tunneling, and thus herald new opportunities in next-generation nonvolatile memory technologies. Recent advancements in the fabrication of…
Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2nm thick Co40Fe40B20 soft layer could be achieved by exchange coupling the Co40Fe40B20…
HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests…
Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the…
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…
We demonstrate the reduction of critical spin-transfer torque (STT) switching currents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) with perpendicular magnetization anisotropy (PMA). The junctions yield tunnel magnetoresistance…
The concept of Perpendicular Shape-Anisotropy Spin-Transfer-Torque Magnetic Random-Access Memory tackles the downsize scalability limit of conventional ultrathin magnetic tunnel junctions (MTJ) below sub-20 nm technological nodes. This…
We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni/octanethiol/Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the…
Magnetic tunnel junctions are nanoscale spintronic devices with microwave generation and detection capabilities. Here we use the rectification effect called "spin-diode" in a magnetic tunnel junction to wirelessly detect the microwave…
Present information and communication technologies are largely based on electronic devices, which suffer from heat generation and high power consumption. Alternatives like spintronics and magnonics, which harness the spin degree of freedom,…
Faster magnetic recording technology is indispensable to massive data storage and big data sciences. {All-optical spin switching offers a possible solution}, but at present it is limited to a handful of expensive and complex rare-earth…
Magnetic skyrmion-based data storage and unconventional computing devices have gained increasing attention due to their topological protection, small size, and low driving current. However, skyrmion creation, deletion, and motion are still…
Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials,…
Emerging altermagnets with zero net magnetic moment and moment-dependent spin splitting offer a promising avenue for antiferromagnetic spintronic devices, yet their integration into magnetic tunnel junctions has been hindered by reliance on…
A superconductor with a spin-split excitation spectrum behaves as an ideal ferromagnetic spin-injector in a tunneling junction. It was theoretical predicted that the combination of two such spin-split superconductors with independently…
Diodes are key elements for electronics, optics, and detection. The search for a material combination providing the best performances for the required application is continuously ongoing. Here, we present a superconducting spintronic tunnel…