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Reversible control of the photoluminescence of ZnO occurring in the visible range, has been achieved by application of a few volts (< 5V) to a device consisting of nanostructured ZnO film sandwiched between Indium Tin Oxide electrode and…

Materials Science · Physics 2011-09-15 Manoranjan Ghosh , A. K. Raychaudhuri

The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics…

Materials Science · Physics 2016-05-20 Min Ju Yun , Sungho Kim , Hee-Dong Kim

We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system.…

Materials Science · Physics 2017-06-06 Sven Dirkmann , Thomas Mussenbrock

In this study, we proposed and demonstrated a self-rectifying property of silicon nitride (Si3N4)-based resistive random access memory device by employing p-type silicon (p-Si) as bottom electrode. The RRAM devices consisted of…

Materials Science · Physics 2016-05-20 Min Ju Yun , Sungho Kim , Hee-Dong Kim

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that…

We theoretically demonstrate that increase of absorption with constant gain in laser systems can lead to onset of laser generation. This counter-intuitive absorption induced lasing (AIL) is explained by emergence of additional lasing modes…

Optics · Physics 2023-07-19 I. A. Nechepurenko , D. G. Baranov , A. V. Dorofeenko

This paper explores the use of reconfigurable intelligent surfaces (RIS) in mitigating cross-system interference in spectrum sharing and secure wireless applications. Unlike conventional RIS that can only adjust the phase of the incoming…

Information Theory · Computer Science 2023-07-03 Fangzhou Wang , A. Lee Swindlehurst

We demonstrate an all-optical switch that operates at ultra-low-light levels and exhibits several features necessary for use in optical switching networks. An input switching beam, wavelength $\lambda$, with an energy density of $10^{-2}$…

The resistive switching (RS) properties as a function of temperature were studied for Ag/La$_{1-x}$Sr$_x$CoO$_3$ (LSCO) interfaces. The LSCO is a fully-relaxed 100 nm film grown by metal organic deposition on a LaAlO$_3$ substrate. Both low…

Materials Science · Physics 2016-08-03 C. Acha , A. Schulman , M. Boudard , K. Daoudi , T. Tsuchiya

Ultrafast non-thermal manipulation of magnetization by light relies on either indirect coupling of the electric field component of the light with spins via spin-orbit interaction or direct coupling between the magnetic field component and…

I show that a nonequilibrium paraelectric to ferroelectric transition can be induced using midinfrared pulses. This relies on a quartic $lQ_{\textrm{l$_z$}}^2Q_{\textrm{h$_x$}}^2$ coupling between the lowest ($Q_{\textrm{l$_z$}}$) and…

Strongly Correlated Electrons · Physics 2017-05-03 Alaska Subedi

The photocatalytic activity of nanostructured In2O3-x(OH)y for the Reverse Water Gas Shift (RWGS) Reaction CO2 + H2 -> CO + H2O can be greatly enhanced by substitution of Bi(III) for In(III) in the lattice of BizIn2-zO3-xOHy. This behavior…

Chemical Physics · Physics 2019-04-17 Joel Y. Y Loh , Yufeng Ye , Nazir P. Kherani

Stoichiometric SiNx layers (x = [N]/[Si] = 1.33) are doped with Si atoms by ultra-low energy ion implantation (ULE-II) and subsequently annealed at different temperatures in inert ambient conditions. Detailed material and memory cells…

Two-dimensional transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light-matter interactions. To fully explore their potential in photoconductive detectors, high…

Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity…

Instrumentation and Detectors · Physics 2021-05-19 T. Hennen , E. Wichmann , A. Elias , J. Lille , O. Mosendz , R. Waser , D. J. Wouters , D. Bedau

Free space optical (FSO) transmission has emerged as a key candidate technology for 6G to expand new spectrum and improve network capacity due to its advantages of large bandwidth, low electromagnetic interference, and high energy…

Performance · Computer Science 2023-07-17 Wen Fang , Wen Chen , Qingqing Wu , Kunlun Wang , Shunqing Zhang , Qingwen Liu , Jun Li

Reconfigurable intelligent surfaces (RISs) enable reliable low-latency millimeter wave (mmWave) communication links in cases of a blocked line-of-sight (LoS) between the base station (BS) and the user equipment (UE), i.e. a RIS mounted on a…

Systems and Control · Electrical Eng. & Systems 2024-02-13 Hamed Radpour , Markus Hofer , David Loschenbrand , Lukas Walter Mayer , Andreas Hofmann , Martin Schiefer , Thomas Zemen

We introduce an all-optical system, termed the "lying mirror", to hide input information by transforming it into misleading, ordinary-looking patterns that effectively camouflage the underlying image data and deceive the observers. This…

Optics · Physics 2024-10-22 Yuhang Li , Shiqi Chen , Bijie Bai , Aydogan Ozcan

The strongly correlated material La0.7Sr0.3MnO3 (LSMO) exhibits metal-to-insulator and magnetic transition near room temperature. Although the physical properties of LSMO can be manipulated by strain, chemical doping, temperature, or…

Photonic integrated resonators stand out as reliable frequency converters due to their compactness and stability, with second-harmonic generation (SHG) efficiencies of up to 17000%/W reported recently in aluminum nitride microrings. In this…

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