The resistive switching (RS) properties as a function of temperature were studied for Ag/La1−xSrxCoO3 (LSCO) interfaces. The LSCO is a fully-relaxed 100 nm film grown by metal organic deposition on a LaAlO3 substrate. Both low and a high resistance states were set at room temperature and the temperature dependence of their current-voltage (IV) characteristics was mea- sured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties.
@article{arxiv.1606.07974,
title = {Transport mechanism through metal-cobaltite interfaces},
author = {C. Acha and A. Schulman and M. Boudard and K. Daoudi and T. Tsuchiya},
journal= {arXiv preprint arXiv:1606.07974},
year = {2016}
}
Comments
13 pages, 5 figures, to be published in APL. Corresponding author: C. Acha (acha@df.uba.ar)