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Related papers: Strain Engineering in Monolayer WS2 and WS2 Nanoco…

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Understanding and controlling the electronic properties of two-dimensional materials is crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides such as WS$_2$ have garnered…

Monolayer transition metal dichalcogenides (TMDs) are known to be highly sensitive to externally applied tensile or compressive strain. In particular, strain can be exploited as a tool to control the optical response of TMDs. However, the…

Mesoscale and Nanoscale Physics · Physics 2019-03-19 Zahra Khatibi , Maja Feierabend , Malte Selig , Samuel Brem , Christopher Linderälv , Paul Erhart , Ermin Malic

Tuning physical properties of transition metal dichalcogenide (TMD) monolayers by strain engineering have most widely studied, and recently Janus TMD monolayer MoSSe has been synthesized. In this work, we systematically study biaxial strain…

Materials Science · Physics 2018-08-01 San-Dong Guo

Molybdenum disulfide (MoS$_2$) is a promising candidate for 2D nanoelectronic devices, that shows a direct band-gap for monolayer structure. In this work we study the electronic structure of MoS$_2$ upon both compressive and tensile strains…

Materials Science · Physics 2016-05-03 Miquel López-Suárez , Igor Neri , Riccardo Rurali

Semiconducting transition metal dichalcogenides (TMDs) are desired as active materials in optoelectronic devices due to their strong excitonic effects. They can be exfoliated from their parent layered materials with low-cost and for mass…

Mechanical strain is a powerful tool to tune the optical and optoelectronic properties of atomically thin semiconductors. Inhomogeneous strain plays an important role in exciton funneling and the activation of single-photon emitters in 2D…

The sensitive dependence of electronic and thermoelectric properties of MoS$_2$ on the applied strain opens up a variety of applications in the emerging area of straintronics. Using first principles based density functional theory…

Materials Science · Physics 2015-06-22 Swastibrata Bhattacharyya , Tribhuwan Pandey , Abhishek K. Singh

Monolayer transition metal dichalcogenides (MX2) are promising candidates for future electronics. Although the transport properties (e.g. mobility) at low electric field have been widely studied, there are limited studies on high-field…

Materials Science · Physics 2020-11-04 Chenmu Zhang , Long Cheng , Yuanyue Liu

Atomic monolayers of transition metal dichalcogenides represent an emerging material platform for the implementation of ultra compact quantum light emitters via strain engineering. In this framework, we discuss experimental results on…

Monolayer transition metal dichalcogenides have emerged as promising materials for optoelectronic and nanophotonic devices. However, the low photoluminescence (PL) quantum yield (QY) hinders their various potential applications. Here we…

Monolayers of transition-metal dichalcogenides (TMDs) hold great promise as future nanoelectronic and optoelectronic devices. An essential feature for achieving high device performance is the use of suitable supporting substrates, which can…

Materials Science · Physics 2021-03-10 Nourdine Zibouche , Martin Schlipf , Feliciano Giustino

Within a two-band $k\cdot p$ method we analyze different types of strain for the $K$ valley optical characteristics of a freestanding monolayer MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$. We predict that circular polarization selectivity for…

Mesoscale and Nanoscale Physics · Physics 2018-10-23 Shahnaz Aas , Ceyhun Bulutay

Engineering atomic-scale defects is crucial for realizing wafer-scale, single-crystalline transition metal dichalcogenide monolayers for electronic devices. However, connecting atomic-scale defects to larger morphologies poses a significant…

We investigate the response of excitons in two-dimensional semiconductors subjected to controlled non-uniform strain fields. In our approach to non-uniform strain-engineering, a WS$_2$ monolayer is suspended over a triangular hole. Large…

Mesoscale and Nanoscale Physics · Physics 2025-10-16 Sviatoslav Kovalchuk , Moshe G. Harats , Guillermo López-Polín , Jan N. Kirchhof , Katja Höflich , Kirill I. Bolotin

Van der Waals single-layer materials are characterized by an inherent extremely low bending rigidity and therefore are prone to nanoscale structural modifications due to substrate interactions. Such interactions can induce excess charge…

We present a comprehensive theoretical study of strain-engineered quantum transport in monolayer tungsten diselenide (WSe$_2$) in the presence of an electrostatic scalar potential. By incorporating strain effects within a low-energy Dirac…

Mesoscale and Nanoscale Physics · Physics 2026-05-26 Rachid El Aitouni , Hasna Chnafa , Clarence Cortes , David Laroze , Ahmed Jellal

Strain engineering provides a powerful means to tune the properties of two-dimensional materials. Accordingly, numerous studies have investigated the effect of bi- and uniaxial strain. Yet, the strain fields in many systems such as…

Materials Science · Physics 2023-09-14 Mohammadreza Daqiqshirazi , Thomas Brumme

Monolayers of transition metal dichalcogenides (TMDs) have recently emerged as a promising optoelectronic platform. To leverage their full potential, however, it is important to understand and engineer the properties of the different…

The use of simple, fast and economic experimental tools to characterize low-dimensional materials is an important step in the process of democratizing the use of such materials in laboratories around the world. Raman spectroscopy has arisen…

It is important to study the van der Waals interface in emerging vertical heterostructures based on layered two-dimensional (2D) materials. Being atomically thin, 2D materials are susceptible to significant strains as well as charge…

Mesoscale and Nanoscale Physics · Physics 2019-05-22 Rahul Rao , Ahmad E. Islam , Simranjeet Singh , Rajiv Berry , Roland K Kawakami , Benji Maruyama , Jyoti Katoch
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