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Van der Waals heterostructures give access to a wide variety of new phenomena that emerge thanks to the combination of properties brought in by the constituent layered materials. We show here that owing to an enhanced interaction cross…

We report on fabrication of devices integrating FeTe$_{0.55}$Se$_{0.45}$ with other van-der-Waals materials, measuring transport properties as well as tunneling spectra at variable magnetic fields and temperatures down to 35 mK. Transport…

Superconductivity · Physics 2019-08-28 Ayelet Zalic , Shahar Simon , Sergei Remennik , Atzmon Vakahi , Genda D. Gu , Hadar Steinberg

As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) remain a topic of immense interest. Specifically, given their low operational switching costs, they find many niche applications in new computing architectures with the promise…

Van der Waals heterostructures have emerged as promising building blocks that offer access to new physics, novel device functionalities, and superior electrical and optoelectronic properties. Applications such as thermal management,…

Van der Waals heterostructures provide a versatile tool to not only protect or control, but also enhance the properties of a 2D material. We use ab initio calculations and semi-analytical models to find strategies which boost the mobility…

Materials Science · Physics 2021-02-17 Thibault Sohier , Marco Gibertini , Matthieu Verstraete

We report a strategy to design nanoscale cold-source field-effect transistors (CS-FETs) with bias-independent sub-60 mV/dec subthreshold swing (SS). By first-principles calculations and quantum-transport simulations, we reveal that the…

Mesoscale and Nanoscale Physics · Physics 2022-11-07 Kunyi Liu , Fei Lu , Yuan Li

The intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to…

Materials Science · Physics 2021-02-16 Yan Liang , Ning Mao , Ying Dai , Liangzhi Kou , Baibiao Huang , Yandong Ma

van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely…

Mesoscale and Nanoscale Physics · Physics 2015-11-10 Daowei He , Yiming Pan , Haiyan Nan , Shuai Gu , Ziyi Yang , Bing Wu , Xiaoguang Luo , Bingchen Xu , Yuhan Zhang , Yun Li , Zhenhua Ni , Baigeng Wang , Jia Zhu , Yang Chai , Yi Shi , Xinran Wang

In van der Waals heterostructures, electronic bands of two-dimensional (2D) materials, their nontrivial topology, and electron-electron interactions can be dramatically changed by a moire pattern induced by twist angles between different…

Novel materials with nontrivial electronic and photonic band topology are crucial for realizing novel devices with low power consumption and heat dissipation, and quantum computing free of decoherence. Here using first-principles approach,…

Materials Science · Physics 2017-01-18 Junwei Liu , Hua Wang , Chen Fang , Liang Fu , Xiaofeng Qian

Sliding and twisting van der Waals layers with respect to each other gives rise to moir\'e structures with emergent electronic properties. Electrons in these moir\'e structures feel weak potentials that are typically in the tens of…

Mesoscale and Nanoscale Physics · Physics 2020-07-14 Drew Edelberg , Hemant Kumar , Vivek Shenoy , Héctor Ochoa , Abhay N. Pasupathy

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic…

The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…

Mesoscale and Nanoscale Physics · Physics 2016-11-15 Wenjing Yan , Oihana Txoperena , Roger Llopis , Hanan Dery , Luis E. Hueso , Fèlix Casanova

The use of metal van der Waals contacts and the implicit reduction in Fermi-level pinning in contacted semiconductors has led to remarkable device optimizations. For example, using graphene as an electrical contact allows for tunable…

Recent observations of large unconventional spin-orbit torques in van der Waals (vdW) materials are driving intense interest for energy-efficient spintronic applications. A key limitation of ferromagnet (FM)/vdW heterostructures is their…

Thermal diodes that enable directional heat transport are essential for advanced thermal management in microelectronics, energy systems, and thermal logic devices. However, existing designs based on phase-change materials, nanostructures,…

Applied Physics · Physics 2025-07-01 Qinyun Ding , Yuhao Wang , Guanqing Xiong , Wei Chen , Ying Chen , Zhaoguang Wang , Arup Neogi , Jaehyung Ju

We propose a novel probe technique capable of performing local low-temperature spectroscopy on a 2D electron system (2DES) in a semiconductor heterostructure. Motivated by predicted spatially-structured electron phases, the probe uses a…

Mesoscale and Nanoscale Physics · Physics 2011-01-06 Adam Sciambi , Matthew Pelliccione , Seth R. Bank , Arthur C. Gossard , David Goldhaber-Gordon

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as top candidates for post-silicon electronics. While most of 2D TMDs exhibit isotropic behavior, lowering the lattice symmetry could induce…

Heterostructures of 2D van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and…

Materials Science · Physics 2020-10-23 Arvind Shankar Kumar , Mingyuan Wang , Yancheng Li , Ryuji Fujita , Xuan P. A. Gao
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