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Cu3Nb2O8 is an unusual multiferroic compound that undergoes a series of magnetic ordering at low temperatures. Concurrent development of electric polarization has been reported at TN1 ~25 K corresponding to a non-collinear helicoidal…

Strongly Correlated Electrons · Physics 2015-06-22 G. Sharma , J. Saha , S. D. Kaushik , V. Siruguri , S. Patnaik

Improper ferroelectrics are described by two order parameters: a primary one, driving a transition to long-range distortive, magnetic or otherwise non-electric order, and the electric polarization, which is induced by the primary order…

Ferroelectric materials are characterized by the presence of an electric dipole that can be reversed by application of an external electric field, a feature that is exploited in ferroelectric memories. All ferroelectrics are piezoelectric,…

Mesoscale and Nanoscale Physics · Physics 2011-10-07 H. Lu , C. -W. Bark , D. Esque de los Ojos , J. Alcala , C. -B. Eom , G. Catalan , A. Gruverman

Antiferroelectricity is a state of matter that has so far eluded a clear-cut definition. Even in the best-known material realization, PbZrO$_3$, the physical nature of the driving force towards an antipolar order has not been settled yet.…

Materials Science · Physics 2023-03-15 Konstantin Shapovalov , Massimiliano Stengel

We demonstrate that small but finite ferroelectric polarization ($\sim$0.01 $\mu$C/cm$^2$) emerges in orthorhombic LuFeO$_3$ ($Pnma$) at $T_N$ ($\sim$600 K) because of commensurate (k = 0) and collinear magnetic structure. The synchrotron…

The ferroelectricity in $\mathrm{HfO}_2$ thin films is widely attributed to the formation of a polar orthorhombic phase named OIII phase. However, the complexity of OIII phase originated from its low symmetry becomes an obstacle for…

Materials Science · Physics 2026-03-17 Chenxi Yu , Jiajia Zhang , Xujin Song , Fei Liu , Jinfeng Kang

Local inhomogeneities known as polar nanoregions (PNR) play a key role in governing the dielectric properties of relaxor ferroelectrics - a special class of material that exhibits an enormous electromechanical response and is easily…

Materials Science · Physics 2009-11-13 Guangyong Xu , Jinsheng Wen , C. Stock , P. M. Gehring

Low-dimensional ferroelectricity and polar materials have attracted considerable attentions for their fascinating physics and potential applications. Based on first-principles calculations, here we investigate the stacking modes and polar…

Materials Science · Physics 2022-10-12 Wencong Sun , Ning Ding , Jun Chen , Hai-Peng You , Jin Peng , Shan-Shan Wang , Shuai Dong

We performed first principles calculations for epitaxially strained orthorhombic CaTiO$_3$. The computational results reveal the existence of a metastable ferroelectric phase at compressive strain with unexpected in-plane polarization.…

Materials Science · Physics 2013-08-27 Qibin Zhou , Karin M. Rabe

Properties of (BaTiO$_3$)$_1$/(BaZrO$_3$)$_n$ ferroelectric superlattices (SLs) with $n = {}$1--7 grown in the [001] direction are calculated from first principles within the density functional theory. It is revealed that the…

Materials Science · Physics 2013-06-20 Alexander I. Lebedev

Magnetoelectric (ME) effect is recognized for its utility for low-power electronic devices.Largest ME coefficients are often associated with phase transitions in which ferroelectricity is induced by magnetic order. Unfortunately, in these…

While nature provides a plethora of perovskite materials, only a few exhibits large ferroelectricity and possibly multiferroicity. The majority of perovskite materials have the non-polar CaTiO$_3$(CTO)structure, limiting the scope of their…

Materials Science · Physics 2022-05-25 Hongwei Wang , Fujie Tang , Massimiliano Stengel , Hongjun Xiang , Qi An , Tony Low , Xifan Wu

Within the broad class of multiferroics (compounds showing a coexistence of magnetism and ferroelectricity), we focus on the subclass of "improper electronic ferroelectrics", i.e. correlated materials where electronic degrees of freedom…

Materials Science · Physics 2012-07-26 Silvia Picozzi , Alessandro Stroppa

We present key issues of related phenomenons of the Ferroelectricity and the Charge Disproportionation in organic metals. In (TMTTF_2X the dielectric susceptibility demonstrates clear cases of the ferroelectric and anti-ferroelectric phase…

Strongly Correlated Electrons · Physics 2007-05-23 S. Brazovskii , P. Monceau , F. Nad

Ferroelectricity has been found to occur in several insulating systems, such as TbMnO$_3$ (TMO) and Ni$_3$V$_2$O$_8$ (NVO) which have more than one phase with incommensurately modulated long-range magnetic order. Here we give a…

Materials Science · Physics 2009-11-11 A. Brooks Harris

High-frequency dielectric studies of Bi_0.85Nd_0.15FeO_3 ceramics performed betweeen 100 and 900 K reveal hardening of most polar phonons on cooling below antiferroelectric phase transition, which occurs near 600 K. Moreover, a strong THz…

Materials Science · Physics 2011-10-18 V. Goian , S. Kamba , S. Greicius , D. Nuzhnyy , S. Karimi , I. M. Reaney

Despite its simple structure and low degree of electronic correlation, SrTiO$_3$ (STO) features collective phenomena linked to charge transport and, ultimately, superconductivity, that are not yet fully explained. Thus, a better insight in…

The structure and properties of the 1:1 superlattice of LaVO$_{3}$ and SrVO$_{3}$ are investigated with a first-principles density-functional-theory-plus-$U$ (DFT+$U$) method. The lowest energy states are antiferromagnetic charge-ordered…

Materials Science · Physics 2017-03-01 Se Young Park , Anil Kumar , Karin M. Rabe

It is generally accepted that oxygen vacancies play a central role in the emergence of ferroelectricity for HfO2-based materials, but the underlying mechanism still remains elusive. Herein, starting from the basic characterization circuit,…

Materials Science · Physics 2021-12-28 Yong Cheng , Maoyuan Zheng , Xingwang Zhang , Hao Dong , Yitian Jiang , Jinliang Wu , Jing Qi , Zhigang Yin

Ferroelectricity in the complementary metal-oxide semiconductor (CMOS)-compatible hafnia (HfO$_2$) is crucial for the fabrication of high-integration nonvolatile memory devices. However, the capture of ferroelectricity in HfO$_2$ requires…

Materials Science · Physics 2024-07-02 Hong Jian Zhao , Yuhao Fu , Longju Yu , Yanchao Wang , Yurong Yang , Laurent Bellaiche , Yanming Ma