Related papers: Spin torque gate magnetic field sensor
We propose a novel device concept using spin-orbit-torques to realize a magnetic field sensor, where we eliminate the sensor offset using a differential measurement concept. We derive a simple analytical formulation for the sensor signal…
In this work we demonstrate a spin-orbit torque (SOT) magnetic field sensor, designed as a Ta/CoFeB/MgO structure, with high sensitivity and capable of active offset compensation in all three spatial directions. This is described and…
Magnetic torques generated through spin-orbit coupling promise energy-efficient spintronic devices. It is important for applications to control these torques so that they switch films with perpendicular magnetizations without an external…
Spin torque oscillators are spintronic devices that generate a periodic output signal from a non-periodic input, making them promising candidates for applications like microwave communications and neuromorphic computing. However,…
Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves…
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…
Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch…
Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…
Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to…
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…
For energy efficient and fast magnetic memories, switching of perpendicular magnetization by the spin-orbit torque (SOT) appears as a very promising solution, even more using magnetic insulators that suppress electrical shunting. This SOT…
We reported a systematic study of spin-orbit torque biased magnetic sensors based on NiFe/Pt bilayers through both macro-spin modeling and experiments. The simulation results show that it is possible to achieve a linear sensor with a…
Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike…
We demonstrate an ultrathin and semitransparent anisotropic and spin Hall magnetoresistance sensor based on NiFe/Pt heterostructure. The use of spin-orbit torque effective field for transverse biasing allows to reduce the total thickness of…
The ability of spintronic devices to utilize an electric current for manipulating the magnetization has resulted in large-scale developments, such as, magnetic random access memories and boosted the spintronic research area. In this regard,…
Spin-orbit torques promise ultra-efficient magnetization switching used for advanced devices based on emergent quasi-particles such as domain walls and skyrmions. Recently, the spin structure dynamics, materials and systems with tailored…
A general expression of the current induced spin torque in a magnetic layered structure in the presence of external dc or ac voltages is derived in the framework of the scattering matrix approach. A detailed analysis is performed for a…
We theoretically study the influence of a predominant field-like spin-orbit torque on the magnetization switching of small devices with a uniform magnetization. We show that for a certain range of ratios (0.23-0.55) of the Slonczewski to…
We proposed and demonstrated a simple method for detection of in-plane magnetization switching by spin-orbit torque (SOT) in bilayers of non-magnetic / magnetic materials. In our method, SOT is used not only for magnetization switching but…