Related papers: Planar Multilayered 2D GeAs Schottky Photodiode fo…
GaAs Schottky diode detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised before and after a $1.25 \times 10^{14}$~cm$^{-2}$ 24GeV/c proton fluence. The as fabricated Ti-GaAs barrier…
Graphene / silicon (G/Si) heterostructures have been studied extensively in the past years for applications such as photodiodes, photodetectors and solar cells, with a growing focus on efficiency and performance. Here, a specific contact…
Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively…
The availability of high-frequency pulsed emitters in the $2-2.5\,\mu$m wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber-optical communications, surveillance and recognition,…
Current optical communication system operating at 1.55 {\mu}m wavelength band may not be able to continually satisfy the growing demand on the data capacity within the next few years. Opening a new spectral window at around 2 {\mu}m…
The Schottky diode, BN/GaN layered composite contacting to bulk aluminum, is theoretically plausible to harvest wireless energy above X-band. According to our first principle calculation, the insertion of GaN layers dramatically influences…
Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with…
Conventional semiconductors such as silicon and InGaAs based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, non-transparency, non-flexibility and…
Two-dimensional materials (2DMs) meet the demand of broadband and low-cost photodetection on silicon for many applications. Currently, it is still very challenging to realize excellent silicon-2DM PDs. Here we demonstrate…
Integrating two-dimensional (2D) crystals into optical fibers can grant them optoelectronic properties and extend their range of applications. However, our ability to produce complicated structures is limited by the challenges of chemical…
We report on the demonstration of MoS2/GaN UV-visible photodetectors with high spectral responsivity both in UV and in visible regions as well as the observation of MoS2 band-edge in spectral responsivity. Multi-layer MoS2 flakes of…
We developed a 2-mm-thick CdTe double-sided strip detector (CdTe-DSD) with a 250 um strip pitch, which has high spatial resolution with a uniform large imaging area of 10 cm$^2$ and high energy resolution with high detection efficiency in…
Many consumer technologies and scientific methods rely on photodetection of infrared light. We report a Schottky photodetector operating below silicon's band gap energy, through hot carrier injection from a nanoscale metallic absorber. Our…
Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with…
Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these…
In-plane optical anisotropy plays a critical role in manipulating light in a wide range of planner photonic devices. In this study, the strong anisotropy of multilayer 2D GeAs is leveraged and utilized to validate the technical feasibility…
Future generation technologies demand high efficiency photodetectors to enable sensing and switching devices for ultrafast communication and machine vision. This require direct-band gap materials with high photosensitivity, high detectivity…
Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS$_2$, are promising candidates for nanoscale photonics because of strong-light matter interactions. However, Fermi level pinning due to metal-induced…
Two-dimensional molybdenum disulfide (MoS$_2$) featuring atomically thin thickness and unique electronic structure with favorable bandgap has been widely recognized as an attractive new material for the development of the next generation of…
We report an on-chip integrated metal-graphene-silicon plasmonic Schottky photodetector with 85mA/W responsivity at 1.55 um and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors…