Related papers: Weak antilocalization beyond the fully diffusive r…
We study quantum phase coherence and weak localization (WL) in disordered metals with restricted back-scattering and phenomenologically formulate a large class of unconventional transport mechanisms as modified diffusion processes not…
In the presence of the charged impurities, we study the weak localization (WL) effect by evaluating the quantum interference correction (QIC) to the conductivity of Dirac fermions in graphene. With the inelastic scattering rate due to…
We fabricated and measured antidot lattices in single layer graphene with lattice periods down to 90 nm. In large-period lattices, a well-defined quantum Hall effect is observed. Going to smaller antidot spacings the quantum Hall effect…
Milling of 2D flakes is a simple method to fabricate nanomaterial of any desired shape and size. Inherently milling process can introduce the impurity or disorder which might show exotic quantum transport phenomenon when studied at the low…
The paper examines weak localization (WL) of surface states with a quadratic band crossing in topological crystalline insulators. It is shown that the topology of the quadratic band crossing point dictates the negative sign of the WL…
The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for several c-axis oriented GaN nanowall network samples grown with different average wall-widths are…
We reanalyze some of the critical transport experiments and provide a coherent understanding of the current generation of topological insulators (TIs). Currently TI transport studies abound with widely varying claims of the surface and bulk…
The results of experimental study of the magnetoconductivity of 2D electron gas caused by suppression of the interference quantum correction in HgTe single quantum well heterostructure with the inverted energy spectrum are presented. It is…
Many conductors, including recently studied Dirac materials, show saturation of coherence length on decreasing temperature. This surprising phenomenon is assigned to external noise, residual magnetic impurities or two-level systems specific…
We investigate the correlation between rest-frame UV flux variability of broad absorption line (BAL) quasars and their variability in BAL equivalent widths (EWs) in a various timescale from $<10$~days to a few years in the quasar…
Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultra thin films of the topological…
Combining scattering matrix formalism with non-linear $\sigma$-model technique we analyze weak localization effects in arrays of chaotic quantum dots connected via barriers with arbitrary distribution of channel transmissions. With the aid…
We have conducted a comprehensive investigation into the magneto-transport properties of few-layer black phosphorus in terms of phase coherence length, phase coherence time, and mobility via weak localization measurement and Hall-effect…
We use a van-der-Waals pickup technique to fabricate different heterostructures containing WSe$_2$(WS$_2$) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts and a topgate was…
We investigate the high magnetic field regime of wide quantum wells (WQW) for the case of a many valley host semiconductor. The complete system is described within a modified Landauer-Buettiker formalism and we demonstrate that a parallel…
We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown via molecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level of the system lies in the…
In-plane magnetoconductance of InSb quantum wells (QW) containing a two dimensional electron gas (2DEG) is presented. Using a vector magnet, we created a magnetoconductance map which shows the suppression of weak antilocalization (WAL) as a…
Topological insulators represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two dimensional (2D) system based on the HgTe quantum well (QW) of critical width…
The geometry of quantum wells (QWs) critically influences carrier mobility, yet systematic comparisons between finite and infinite square QWs remain scarce. We present a comprehensive study of GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures…
We study experimentally the transport properties of "inverted" semiconductor HgTe-based quantum well, which is related to the two-dimensional topological insulator, in diffusive transport regime. We perform nonlocal electrical measurements…