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Recent studies in heavily hole-doped iron-based superconductor RbFe$_2$As$_2$ have suggested the emergence of novel electronic nematicity directed along the Fe-As direction, 45$^\circ$ rotated from the usual nematicity ubiquitously found in…
The recent observation of non-classical electron transport regimes in two-dimensional materials has called for new high-resolution non-invasive techniques to locally probe electronic properties. We introduce a novel hybrid scanning probe…
This paper extends the modern theory of tunneling transport to finite temperatures. The extension enables applications to molecular electronic devices connected to semiconducting leads. The paper presents an application of the theory to…
We have investigated charge and spin transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si substrates. This was done by exciting the nanowire by tightly-focussed…
We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical…
Proximity-effect and resistance magneto-fluctuations measurements in submicron Nd1.2Ba1.8Cu3Oz (NBCO) nano-loops are reported to investigate coherent charge transport in the non-superconducting state. We find an unexpected inhibition of…
We report on the transport of ultracold cesium and rubidium atoms over $37.2\,$cm in under $25\,$ms using an optical conveyor belt formed by two counter-propagating beams with a controllable frequency difference that generate a movable…
While classical percolation is well understood, percolation effects in randomly packed or jammed structures are much less explored. Here we investigate both experimentally and theoretically the electrical percolation in a binary composite…
Nonequilibrium quantum transport is of central importance in nanotechnology. Its description requires the understanding of strong electronic correlations, which couple atomic-scale phenomena to the nanoscale. So far, research in correlated…
We report on fabrication and characterization of electronic devices printed with inks of quasi-1D van der Waals materials. The quasi-1D van der Waals materials are characterized by 1D motifs in their crystal structure, which allows for…
We address the quality of electrical contact between carbon nanotubes and metallic electrodes by performing first-principles calculations for the electron transmission through ideal 2- and 3-terminal junctions, thus revealing the physical…
Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been…
Utilizing atomistic lattice dynamics and scattering theory, we study thermal transport in nanodevices made of 10 nm thick silicon nanowires, from 10 to 100 nm long, sandwiched between two bulk reservoirs. We find that thermal transport in…
The description of electron-electron interactions in transport problems is both analytically and numerically difficult. Here we show that a much simpler description of electron transport in the presence of interactions can be achieved in…
By combining density functional theory and nonequilibrium Green's function, we study the electronic and transport properties of monolayer black phosphorus nanoribbons (PNRs). First, we investigate the band-gap of PNRs and its modulation by…
We calculate the current and electrostatic potential drop in metallic carbon nanotube wires self-consistently, by solving the Green's function and electrostatics equations in the ballistic case. About one tenth of the applied voltage drops…
Halide perovskites are known for their rich phase diagram and superior performance in diverse optoelectronics applications. The latter property is often attributed to the long electron-hole recombination time, whose underlying physical…
Polycrystalline NdFeAsO0.88F0.12 superconductors prepared by high pressure (HP) and ambient pressure (AP) method were comparatively studied by magnetization and transport measurements. Upper critical field (Hc2), irreversibility field…
Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often…
A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by…