Electronic and Transport Property of Phosphorene Nanoribbon
Abstract
By combining density functional theory and nonequilibrium Green's function, we study the electronic and transport properties of monolayer black phosphorus nanoribbons (PNRs). First, we investigate the band-gap of PNRs and its modulation by the ribbon width and an external transverse electric feld. Our calculations indicate a giant Stark effect in PNRs, which can switch on transport channels of semiconducting PNRs under low bias, inducing an insulator-metal-transition. Next, we study the transport channels in PNRs via the calculations of the current density and local electron transmission pathway. In contrast to graphene and MoS_2 nanoribbons, the carrier transport channels under low bias are mainly located in the interior of both armchair and zigzag PNRs, and immune to a small amount of edge defects. Lastly, a device of the PNR-based dual-gate feld-effect-transistor, with high on/off-ratio of 10^3, is proposed based on the giant electric feld tuning effect.
Keywords
Cite
@article{arxiv.1405.3077,
title = {Electronic and Transport Property of Phosphorene Nanoribbon},
author = {Qingyun Wu and Lei Shen and Ming Yang and Zhigao Huang and Yuan Ping Feng},
journal= {arXiv preprint arXiv:1405.3077},
year = {2016}
}
Comments
accepted by Physical Review B (2015)