Related papers: SnO/$\beta$-Ga2O3 vertical $pn$ heterojunction dio…
We report on the fabrication and characterization of patterned high-mobility two-dimensional electron gases (2DEG) formed on SrTiO$_3$ (STO) substrate surfaces by hydrogen plasma exposure. The resulting devices consistently showed high…
In this work, we have integrated bismuth zinc niobium oxide (BZN), a high-k dielectric material, in metal-insulator-semiconductor (MIS) and field-plated metal-semiconductor (FP-MS) Schottky barrier diodes on $\beta$-$Ga_2O_3$. This…
Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of $n$- and $p$-type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that $\rm…
Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime by molecular beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm^2…
This study reports the decomposition of beta-SnWO4 into Sn, SnO2, and WO3 induced by static compression. We performed high-pressure synchrotron powder angle-dispersive X-ray diffraction measurements and found that decomposition occurs at a…
The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 $^{\circ}$C and 850 $^{\circ}$C. Epitaxial growth of NiO(111) with two…
SrTiO$_3$ exhibits a superconducting dome upon doping with Nb, with a maximum critical temperature \mbox{$T_\mathrm{c} \approx 0.4$~K}. Using microwave stripline resonators at frequencies from 2 to 23~GHz and temperatures down to 0.02~K, we…
In this work, we present a Pt decorated ZnO thin film-based gas sensor for hydrogen detection, fabricated using a sputtering technique and an in-situ Pt decoration approach. Specifically, we deposit a ZnO thin film on an interdigitated…
The present investigation reports on the fabrication and characterization of heterojunctions based on in situ Eu doped CdO layers, which were deposited on p-type silicon using the plasma assisted molecular beam epitaxy (PA MBE) method. The…
Vertical diamond Schottky diodes with blocking voltages $V_{\text{BD}} > 2.4 \text{ kV}$ and on-resistances $R_{\text{On}} < 400 \text{ m}\Omega \text{cm}^{2}$ were fabricated on homoepitaxially grown diamond layers with different surface…
Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage,…
Superconducting electronics offer significant advantages in speed and power efficiency for next-generation computing and communication systems. However, their practical deployment is limited by the absence of simple, efficient, and scalable…
In the recent years it has been possible to achieve diode-like, non-reciprocal current-voltage response in Josephson junctions, despite the intrinsic symmetry of the Josephson effect itself. This is typically achieved by incorporating…
Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs…
The Janus structure, by combining properties of different transition metal dichalcogenide (TMD) monolayers in a single polar material, has attracted increasing research interest because of their particular structure and potential…
SrSnO3 (SSO) is an emerging ultra-wide bandgap (UWBG) semiconductor with potential for highpower applications. In-plane compressive strain was recently shown to stabilize the high temperature tetragonal phase of SSO at room temperature (RT)…
Thermal diode is a growing technology and important for active thermal flow control. Since the theoretical designing of thermal diode in 2004, various kinds of solid-state thermal diodes have been theoretically and experimentally…
The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densities and mobilities, before and after illumination, have been…
We study the superconducting diode effect (SDE) in a diffusive superconductor - normal metal (SN) bilayer subjected to an in-plane magnetic field. The supercurrent flows along the layers, perpendicular to the field. The SDE, manifested as…
Nano particles of pure ZnO, pure SnO$_2$, and nanocomposites of ZnO/SnO$_2$ were synthesized using microwave hydrothermal technique starting from aqueous solutions. Nanocomposites with different molar ratios of ZnO and SnO$_2$ were…