Related papers: Accurate characterization of tip-induced potential…
It is generally assumed that the detection of a single photon as part of an interference pattern erases all possible which-path information. However, recent insights suggest that weak interactions can provide non-trivial experimental…
Thermodynamics of tip-induced nanodomain formation in scanning probe microscopy of ferroelectric films and crystals is studied using the Landau-Ginzburg-Devonshire phenomenological approach. The local redistribution of polarization induced…
We present approximate methods for calculating the three-dimensional electric potentials of finite surface electrodes including gaps between electrodes, and estimate the effects of finite electrode thickness and an underlying dielectric…
We investigated insulating Cu$_2$N islands grown on Cu(100) by means of combined scanning tunneling microscopy and atomic force microscopy with two vastly different tips: a bare metal tip and a CO-terminated tip. We use scanning tunneling…
Integrated optics are used to achieve astronomical interferometry inside robust and compact materials, improving the instruments stability and sensitivity. In order to perform differential phase measurements at the H$\alpha$ line (656.3 nm)…
The conductance through a quantum point contact created by a sharp and hard metal tip on the graphite surface has features which to our knowledge have not been encountered so far in metal contacts or in nanowires. In this paper we first…
Many classes of two-dimensional (2D) materials have emerged as potential platforms for novel electronic and optical devices. However, the physical properties are strongly influenced by nanoscale heterogeneities in the form of edges, grain…
We present Scanning Tunneling Spectroscopy measurements at 0.1 K using tips made of Al. At zero field, the atomic lattice and charge density wave of 2HNbSe2 are observed, and under magnetic fields the peculiar electronic surface properties…
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior.…
One of the distinctive features of hole-doped cuprate superconductors is the onset of a `pseudogap' below a temperature $T^*$. Recent experiments suggest that there may be a connection between the existence of the pseudogap and the topology…
We use an Atomic Force Microscope (AFM) tip to locally probe the electronic properties of semiconducting carbon nanotube transistors. A gold-coated AFM tip serves as a voltage or current probe in three-probe measurement setup. Using the tip…
We present a theoretical study of the measurements of photoinduced force microscopy (PiFM) for composite molecular systems. Using the discrete dipole approximation, we calculate the self-consistent response electric field of the entire…
The role of the tip in inelastic electron tunneling spectroscopy (IETS) performed with scanning tunneling microscopes (STM) is theoretically addressed via first-principles simulations of vibrational spectra of single carbon monoxide (CO)…
A cooled scanning probe microscope (SPM) has been used to image cyclotron orbits of electrons through high-mobility graphene in a magnetic field.1-5 In a hBN-graphene-hBN device patterned into a hall bar geometry, the magnetic field focuses…
Atom interferometers allow determining inertial effects to high accuracy. Quantum-projection noise as well as systematic effects impose demands on large atomic flux as well as ultra-low expansion rates. Here we report on a high-flux source…
A novel method for mapping the local spin and orbital nature of the ground state of a system via corresponding flip excitations in both sectors is proposed based on angle resolved resonant photoemission and related diffraction patterns,…
Recent advances in cold atom interferometry with optical and magnetic atom guides have set the stage for quantum inertial sensors capable of operating in dynamic environments. In this work, we present three key innovations, such as…
Characterizing long-range electric fields and built-in potentials in functional materials at nano- to micrometer scales is of supreme importance for optimizing devices. E.g., the functionality of semiconductor heterostructures or battery…
We report on infrared (IR) spectro-microscopy of the electronic excitations in nanometer-thick accumulation layers in FET devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the…
Semiconductor dopant profiling using secondary electron imaging in a scanning electron microscope (SEM) has been developed in recent years. In this paper, we show that the mechanism behind it also allows mapping of the electric potential of…