Related papers: Half-Metal Spin-Gapless Semiconductor Junctions as…
We propose making light emitting diodes out of inverse spin valves. The proposed diodes rely on the spin-dependent electron transport of inverse spin valves that are layered structures of a ferromagnetic half-metal sandwiched between two…
The intrinsic spin-dependent transport properties of two types of lateral VS2|MoS2 heterojunctions are systematically investigated using first-principles calculations, and their various nanodevices with novel properties are designed. The…
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit…
The current flow in phosphorene pnp junctions is studied. At the interfaces of the junction, omni-directional total reflection takes place, named anti-super-Klein tunneling, as this effect is not due to an energetically forbidden region but…
Modern industry seeks next-generation microelectronics with ultra-low dissipation and noise beyond semiconducting systems, where the superconducting electronics offer promise. Its physical foundation is the superconducting diode effect…
The superconducting diode effect (SDE) refers to the non-reciprocal nature of the critical current (maximum current that a superconductor can withstand before turning into a normal metal) of a superconducting device. Here, we investigate…
Spin injection from a half-metallic electrode in the presence of thermal spin disorder is analyzed using a combination of random matrix theory, spin-diffusion theory, and explicit simulations for the tight-binding s-d model. It is shown…
In typical Josephson junctions, the Josephson current is an odd function of the superconducting phase difference. Recently, diode effect in Josephson junctions is observed in experiments wherein the maximum and the minimum values of the…
Superconducting diodes are a recently-discovered quantum analogueue of classical diodes. The superconducting diode effect relies on the breaking of both time-reversal and inversion symmetry. As a result, the critical current of a…
We study charge transport in voltage-biased single-channel junctions involving helical superconductors with finite Cooper pair momentum. For a Josephson junction, the equilibrium current-phase relation shows a superconducting diode effect:…
Non-magnetic p-n junctions have been fundamental components in the silicon era, serving as the backbone for nearly all Si-based semiconductor devices, including transistors. To tackle challenges such as scaling limitations, excessive…
Spin-gapless semimetals (SGSMs), which generate 100\% spin polarization, are viewed as promising semi-half-metals in spintronics with high speed and low consumption. We propose and characterize a new $\mathbb{Z_{\mathrm{2}}}$ class of…
We theoretically propose a one-dimensional electronic nanodevice inspired in recently fabricated semiconductor-superconductor-ferromagnetic insulator (SE-SC-FMI) hybrid heterostructures, and investigate its zero-temperature transport…
Two-dimensional (2D) superconductors, characterized by their inherent quantum confinement, strong spin-orbit coupling, and diverse forms of symmetry breaking, provide an ideal platform for exploring novel quantum transport phenomena. This…
Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap…
We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with…
A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in…
We study the rectification of spin current in $XXZ$ chains segmented in two parts, each with a different anisotropy parameter. Using exact diagonalization and a matrix product states algorithm we find that a large rectification (of the…
Solid-state spin defects hold great promise as building blocks for various quantum technologies. Embedding spin centers in $p$-$n$ diodes under reverse bias has proved to be a powerful strategy to narrow the optical linewidth and increase…
We theoretically investigate spin-polarized transport in a system composed of a ferromagnetic Scanning Tunneling Microscope (STM) tip coupled to an adsorbed atom (adatom) on a host surface. Electrons can tunnel directly from the tip to the…