Related papers: Stochastic processes in magnetization reversal inv…
Cylindrical nanowires made of soft magnetic materials, in contrast to thin strips, may host domain walls of two distinct topologies. Unexpectedly, we evidence experimentally the dynamic transformation of topology upon wall motion above a…
We simulate the spin torque-induced reversal of the magnetization in thin disks with perpendicular anisotropy at zero temperature. Disks typically smaller than 20 nm in diameter exhibit coherent reversal. A domain wall is involved in larger…
We demonstrate a quasi ballistic switching of the magnetization in a microscopic mag-neto resistive memory cell. By means of time resolved magneto transport we follow the large angle precession of the free layer magnetization of a spin…
When electric and magnetic fields are applied together on a magnetoelectric antiferromagnet, the domain state is subject to reversal. Although the initial and final conditions are saturated single-domain states, the process of reversal may…
The manipulation of mesoscale domain wall phenomena has emerged as a powerful strategy for designing ferroelectric responses in functional devices, but its full potential has not yet been realized in the field of magnetism. We show that…
We report a theoretical overview of the magnetic domain wall behavior under an electric current in infinitely-long nanotubes with azimuthal magnetization, combining the $1$D analytic model and micromagnetic simulations. We highlight effects…
We investigate the stochastic dynamics of nanoscale perpendicular magnetic tunnel junctions (pMTJs) and the correlations that arise when they are electrically coupled. Individual junctions exhibit thermally activated spin-transfer torque…
Most macroscopic magnetic phenomena (including magnetic hysteresis) are typically understood classically. Here, we examine the dynamics of a uniaxial rare-earth ferromagnet deep within the quantum regime, so that domain wall motion, and the…
We calculate the interaction between two magnetic domain walls during their current-induced motion. This interaction produces a separation-dependent resistance and also a differential velocity, causing domains in motion to experience an…
Ferromagnetic domain walls -transitional regions between magnetic domains- are an essential ingredient for racetrack memory, a device concept that promises to deliver faster and more compact memory storage compared to other non-volatile…
Domain walls are the transition regions between two magnetic domains. These objects have been very relevant during the last decade, not only due to their intrinsic interest in the development of novel spintronics devices but also because of…
We study the effect of the domain wall on electronic transport properties in wire of ferromagnetic 3$d$ transition metals based on the linear response theory. We considered the exchange interaction between the conduction electron and the…
Magnetic domain walls are topological solitons whose internal structure is set by competing energies which sculpt them. In common ferromagnets, domain walls are known to be of either Bloch or N\'eel types. Little is established in the case…
The magnetic field (or electric current) driven domain-wall motion in magnetic nanostripes is of considerable interest because it is essential to the performance of information storage and logic devices. One of the currently key problems is…
One of the fundamental effects of the laser-matter interaction is the appearance of an induced transient magnetisation. While the underlying phenomena differ in their microscopic origin and cover a diverse array of materials, here we…
An analytical model was developped to describe the current induced DW dynamics of a Bloch DW in the presence of an external transverse magnetic field. The model takes into account the DW deformation and the magnetization tilting in the…
The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied…
We report on the controlled switching of domain wall (DW) magnetization in aligned stripe domain structures, stabilized in [Co (0.44 nm)/Pt (0.7 nm)]$_X$ ($X = 48$, 100, 150) multilayers with perpendicular magnetic anisotropy. The switching…
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to…
The presence of a domain wall trapped by a sub-micron notch is probed in two ways: through electronic transport measurements and by Magnetic Force Microscopy (MFM). We observe complex magnetic features which are consistent with numerical…