Related papers: MERAM: Non-Volatile Cache Memory Based on Magneto-…
Current portable memory device relies heavily on flash memory technology for its implementation. New generation of non-volatile memory is likely to replace floating gates, charge-trapping memory currently still suffering from inadequate…
Continually learning new classes from a few training examples without forgetting previous old classes demands a flexible architecture with an inevitably growing portion of storage, in which new examples and classes can be incrementally…
The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall…
In the quest for novel, scalable and energy-efficient computing technologies, many non-charge based logic devices are being explored. Recent advances in multi-ferroic materials have paved the way for electric field induced low energy and…
Deep learning-based recommendation systems (e.g., DLRMs) are widely used AI models to provide high-quality personalized recommendations. Training data used for modern recommendation systems commonly includes categorical features taking on…
Hybrid memory systems, comprised of emerging non-volatile memory (NVM) and DRAM, have been proposed to address the growing memory demand of applications. Emerging NVM technologies, such as phase-change memories (PCM), memristor, and 3D…
Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…
Cache prefetcher greatly eliminates compulsory cache misses, by fetching data from slower memory to faster cache before it is actually required by processors. Sophisticated prefetchers predict next use cache line by repeating program's…
Both SRAM and DRAM have stopped scaling: there is no technical roadmap to reduce their cost (per byte/GB). As a result, memory now dominates system cost. This paper argues for a paradigm shift from today's simple memory hierarchy toward…
In this article, we propose a technique to accelerate nonvolatile or hybrid of volatile and nonvolatile processor cache design space exploration for application specific embedded systems. Utilizing a novel cache behavior modeling equation…
A compact, accurate, and bitwidth-programmable in-memory computing (IMC) static random-access memory (SRAM) macro, named CAP-RAM, is presented for energy-efficient convolutional neural network (CNN) inference. It leverages a novel…
Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed. The STT-RAM's small feature size is…
In this paper, we present a new 9T SRAM cell that has good write-ability and improves read stability at the same time. Simulation results show that the proposed design increases Read SNM (RSNM) and Ion/Ioff of read path by 219% and 113%,…
The same as in microprocessor fabrication, nonvolatile memory devices are facing the problem in device size scaling down, such as large leakage current density. High-k materials are considered to solve it. However, simply replacing low-k to…
This report serves two purposes: To introduce and validate the Execution-Cache-Memory (ECM) performance model and to provide a thorough analysis of current Intel processor architectures with a special emphasis on Intel Xeon Haswell-EP. The…
Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we…
Reservoir computing is a highly efficient machine learning framework for processing temporal data by extracting features from the input signal and mapping them into higher dimensional spaces. Physical reservoir layers have been realized…
Time-domain nonvolatile in-memory computing (TD-nvIMC) offers a promising pathway to reduce data movement and improve energy efficiency by encoding computation in delay rather than voltage or current. This work presents a fully integrated…
We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging random access memory (CBRAM) cells and to shed light on their…
The continuing advancement of memory technology has not only fueled a surge in performance, but also substantially exacerbate reliability challenges. Traditional solutions have primarily focused on improving the efficiency of protection…