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GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and…
We report a two-step process to obtain smooth and vertical {10-10} m-plane facets in AlGaN/GaN separate confinement heterostructures designed to fabricate UV lasers emitting at 355 nm. The process consists in a dry etching by RIE-ICP…
Achieving high level of pulsed squeezing, in a platform which offers integration and stability, is a key requirement for continuous-variable quantum information processing. Typically highly squeezed states are achieved with narrow band…
Optically pumped InAs quantum dot microdisk lasers with grooves etched on their surface by a focused ion beam is studied. It is shown that the radial grooves, depending on their length, suppress the lasing of specific radial modes of the…
An integrated silicon nitride resonator is proposed as an ultra-compact source of bright single-mode quadrature squeezed light at 850 nm. Optical properties of the device are investigated and tailored through numerical simulations, with…
Wavelength widely tunable infrared fiber lasers that simultaneously deliver high pulse energies with narrow linewidths are critical for applications ranging from spectroscopy to nonlinear optics, yet achieving this combination has remained…
Laser micro-welding is an advanced manufacturing method today applied in various domains. However, important physical limitations have prevented so far to demonstrate its applicability in silicon and other technology-essential…
A laser was designed and constructed with the goal of producing ultra-short pulses at a high repetition rate as needed for certain applications of multi-photon microscopy. With pure prism-based dispersion compensation repetition rates of up…
A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer…
Tunable lasers emitting at a 2-3 $\mu$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si$_3$N$_4$ photonic…
Hybrid plasmonic lasers provide deep subwavelength optical confinement, strongly enhanced light-matter interaction and together with nanoscale footprint promise new applications in optical communication, bio-sensing and photolithography.…
Nanowire lasers can be monolithically and site-selectively integrated onto silicon photonic circuits. To assess their full potential for ultrafast opto-electronic devices, a detailed understanding of their lasing dynamics is crucial.…
Stimulated surface- and edge-emission were investigated for ZnO thin films grown epitaxially by pulsed laser deposition. The lasing threshold was 0.32 MW/cm2 for surface pumping and 0.5 MW/cm2 for edge pumping, which is significantly lower…
Computer simulations with Synopsys' Sentaurus TCAD of opto-electrical characteristics of separate-confinement heterostructure laser based on AlGaAs are used as an example to study the role of the width and depth of Quantum Well (QW) active…
A three-dimensional numerical simulation is conducted for a complex process in a laser-material system, which involves heat and mass transfer in a compressible gaseous phase and chemical reaction during laser irradiation on a urethane paint…
We address the problem of achieving an optical random laser with a cloud of cold atoms, in which gain and scattering are provided by the same atoms. The lasing threshold can be defined using the on-resonance optical thickness b0 as a single…
We propose a new type of sensor, which uses diamond containing the optically active nitrogen-vacancy (NV$^-$) centres as a laser medium. The magnetometer can be operated at room-temperature and generates light that can be readily fibre…
A challenge of bridging the terahertz gap with semiconductor lasers faces an inevitable problem of enhanced non-radiative Auger recombination with reduction of photon energy. We show that this problem can be mitigated in…
Using an affordable ytterbium laser with sub-mJ of energy combined with a novel pulse compression technique, we demonstrate an extremely competitive state-of-the-art terahertz (THz) source with 53 mW of average power and 310 kV/cm at focus…
We demonstrate efficient diffraction of intense ultrashort laser pulses using optical-field-ionization-induced plasma-neutral gratings formed by spatially structured ionization of a neutral molecular gas in the interference field of two…