Related papers: Charge-Spin Interconversion in Epitaxial Pt Probed…
Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavy metals and topological insulators (TIs) has great potential for ultra-low power magnetoresistive random-access memory (MRAM). To be competitive with conventional…
Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of superconductivity in SrTiO3, the paramagnet-ferromagnet…
A normal metallic film sandwiched between two insulators may have strong spin-orbit coupling near the metal-insulator interfaces, even if spin-orbit coupling is negligible in the bulk of the film. In this paper we study two technologically…
Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…
Realization of efficient spin-orbit torque switching of the N\'eel vector in insulating antiferromagnets is a challenge, often complicated by spurious effects. Quantifying the spin-orbit torques in antiferromagnet/heavy metal…
A large anti-damping spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the…
We demonstrate a nonlinear Hall effect due to the boundary spin accumulation in Pt films grown on Al2O3 substrates. This Hall effect and the previously demonstrated Hanle magnetoresistance provide a complete picture of the spin-precession…
Two classes of spin-orbit coupling (SOC) mechanisms have been considered as candidate sources for the spin orbit torque (SOT): the spin Hall Effect (SHE) in heavy metals with strong SOC and the Rashba effect arising from broken inversion…
This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered…
Spin transfer torque (STT) driven by a charge current plays a key role in magnetization switching in heavy-metal/ferromagnetic-metal structures. The STT efficiency defined by the ratio between the effective field due to STT and the current…
The magnetization manipulation by spin-orbit torques (SOTs) in nonmagnetic-metal (NM)/ferromagnet (FM) heterostructures has provided great opportunities for spin devices. Besides the conventional spin Hall effect (SHE) in heavy metals with…
The spin currents generated by spin-orbit coupling (SOC) in the nonmagnetic metal layer or at the interface with broken inversion symmetry are of particular interest and importance. Here, we have explored the spin current generation…
Writing magnetic bits by spin-orbit torques (SOTs) arising from spin Hall effect creates new possibilities for ultrafast and low-power magnetoresistive random access memory (MRAM). For perpendicular MRAM, an extra in-plane field is required…
Spin Hall effect and its inverse provide essential means to convert charge to spin currents and vice versa, which serve as a primary function for spintronic phenomena such as the spin-torque ferromagnetic resonance and the spin Seebeck…
Spin-orbit torque facilitates efficient magnetization switching via an in-plane current in perpendicularly magnetized heavy metal/ferromagnet heterostructures. The efficiency of spin-orbit-torque-induced switching is determined by the…
In this study, we investigate the spin-charge current conversion characteristics of chemically disordered ferromagnetic single FePt thin films by spin-pumping ferromagnetic resonance experiments performed on both a resonance cavity and on…
Despite their great promise for providing a pathway for very efficient and fast manipulation of magnetization at the nanoscale, spin-orbit torque (SOT) operations are currently energy inefficient due to a low damping-like SOT efficiency per…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetisation switching in advanced spintronic devices. Over the past two decades, researchers have primarily focused on enhancing spin…
Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in…
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based…