Related papers: High-reflectance III-nitride distributed Bragg ref…
III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium gallium nitride light emitting diodes have been successfully produced…
Diffraction gratings with high upward diffraction efficiency and large effective length are required for chip-scale light detection and ranging. In this paper, we propose a diffraction grating based on a multilayer silicon nitride…
Graphene nanoribbons (GNRs) with widths of a few nanometres are promising candidates for future nano-electronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the…
Growth kinetics of AlGaN in NH3 MBE under significant Ga desorption was studied. It was found that the addition of gallium stimulates 2D growth and provides better morphology of films compared to pure AlN. The effect was experimentally…
Transition-metal nitrides constitute a versatile class of materials with diverse properties and wide-ranging applications. Exploring new surface orientations and uncovering novel properties can enable innovative material configurations with…
We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well superlattices that display either near- or mid-infrared intersubband absorption were…
GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al$_{2}$O$_{3}$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg…
We demonstrate the preparation of both armchair and zigzag epitaxial graphene nanoribbons (GNRs) on 4H-SiC using a polymer-assisted, sublimation growth method. Historically, the preparation of GNRs depended on the quality, or smoothness, of…
Lateral superlattices have attracted major interest as this may allow one to modify spectra of two dimensional electron systems and, ultimately, create materials with tailored electronic properties. Previously, it proved difficult to…
In this paper, forward and backward propagating waves and reflectivity in an optical waveguide structure namely the fiber Bragg reflector also considered as a one dimensional photonic crystal, are analytically computed using coupled mode…
New perspective cubic quasi-alloys CdO/MgO short period superlattices were grown on sapphire substrates by plasma assisted molecular beam epitaxy. Their crystal quality was characterized using High Resolution X-ray Diffraction (HRXRD) and…
Optical metasurfaces, comprised of subwavelength nanostructures, hold a great promise to high-power laser optics but also a limited pertinence due to their currently limited aperture size, throughput and durability. Here, an alternative…
Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers are grown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In2Se3, a…
Bragg Coherent Diffraction Imaging (BCDI) is a powerful strain imaging tool, often limited by beam-induced sample instability for small particles and high power densities. Here, we devise and validate an adapted diffraction volume assembly…
With transfer matrix theory, we study the transmission of a distributed Bragg reflector (DBR) with two dielectric gratings on top and on the bottom. Owing to the diffraction of the two gratings, the transmission shows a comb-like spectrum…
We demonstrate a new method to measure absorption coefficients in any family of nanowires, provided they are grown on a substrate having considerable difference in permittivity with the nanowire-air matrix. In the case of high crystal…
We reported on the observation of extremely high-density ($>10^{14}$cm$^{-2}$) 2D electron gas in N-polar AlGaN/GaN heterostructures grown on sapphire substrates. Due to introducing the GaN/AlN superlattice (SL) back barrier between the GaN…
TiS3 nanosheets have proven to be promising candidates for ultrathin optoelectronic devices due to their direct narrow band-gap and the strong light-matter interaction. In addition, the marked in-plane anisotropy of TiS3 is appealing for…
Compact layers containing embedded semiconductor particles consolidated using pulsed electric current sintering exhibit intense, broadband near-infrared reflectance. The composites consolidated from nano- or micro-silica powder have a…
Hexagonal boron nitride (hBN) is a layered dielectric material with a wide range of applications in optics and photonics. In this work, we demonstrate a fabrication method for few-layer hBN flakes with areas up to 5000 $\rm \mu m$. We show…