Related papers: Wurtzite III-nitride distributed Bragg reflectors …
While non-nitride III-V semiconductors typically have a zincblende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures…
We investigate the synthesis of 340-nm-thick Sc$_x$Al$_{1-x}$N layers with $0 \leq x \leq 0.35$ on AlN-buffered Si(111) by plasma-assisted molecular beam epitaxy. We employ an AlN nucleation layer under conditions giving rise to…
Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor…
Dirac semimetals (DSMs) are three dimensional analogue to graphene with symmety enforced bulk Dirac nodes. Among various DSMs, ZrSiS has been attracting more interests recently, due to its three dimensional Dirac nodal line protected by the…
We have studied the driving forces governing reconstructions on polar GaN surfaces employing first-principles total-energy calculations. Our results reveal properties not observed for other semiconductors, as for example a strong tendency…
High-reflectivity mirrors in the mid-infrared (MIR) range are essential for next-generation optoelectronic devices but are still constrained by strain accumulation, poor thermal conductivity, and growth instability of thick multi-alloy…
In this work we study the structural stability and electronic properties of the Beryllium sulphide nanowires (NWs) in both zinc blende (ZB) and wurtzite (WZ) phases with triangle and hexagonal cross section, using first principle…
The Bragg regime shifts when conventional materials in a multilayer distributed Bragg reflector (DBR) are replaced by artificial materials with the so-called negative index of refraction. This provides an avenue for characterizing the…
Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting…
Recent works[1-3] reported evidence for charge density waves (CDWs) in infinite layer nickelates (112 structure) based on resonant diffraction at the Ni $L_3$ edge measured at fixed scattering angle. We have found that a measurement with…
Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optoelectronic devices. In contrast, rocksalt-based nitrides are known for their metallic and refractory properties. Breaking this dichotomy, here we…
Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice…
We investigate the full and half-shells of Pb(1-x)Sn(x)Te topological crystalline insulator deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV-VI shell with…
Wurtzite ferroelectrics are rapidly emerging as a promising material class for next-generation non-volatile memory technologies, owing to their large remanent polarization, intrinsically ordered three-dimensional crystal structure, and full…
The crystal structure of the candidate topological superconductor Cu$_x$Bi$_2$Se$_3$ was studied by single-crystal neutron diffraction using samples obtained by inserting the Cu dopant electrochemically. Neither structural refinements nor…
As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits given by quantum mechanics. Thus, two-dimensional (2D) structures appear as one of the best solutions to meet the…
We study Bragg scattering at 1D atomic lattices. Cold atoms are confined by optical dipole forces at the antinodes of a standing wave generated inside a laser-driven cavity. The atoms arrange themselves into an array of lens-shaped layers…
Molecular beams of rare gas atoms and D_2 have been diffracted from 100 nm period SiN_x transmission gratings. The relative intensities of the diffraction peaks out to the 8th order depend on the diffracting particle and are interpreted in…
We have designed, optimized, fabricated and characterized highly reflective quasi-omnidirectional (angular range of $0-60^\circ$) multilayered structures with a wide spectral range. Two techniques, chirping (a continuous change in…
Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the…