Related papers: Anderson localization effects on doped Hubbard mod…
For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…
We study a simple model for $f$-electron systems, the three-dimensional periodic Anderson model, in which localized $f$ states hybridize with neighboring $d$ states. The $f$ states have a strong on-site repulsion which suppresses the double…
We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…
Cooperation and competition between the antiferromagnetic, d-wave superconducting and Mott-insulating states are explored for the two-dimensional Hubbard model including nearest and next-nearest-neighbor hoppings at zero temperature. Using…
The role of Coulomb disorder is analysed in the Anderson-Falicov-Kimball model. Phase diagrams of correlated and disordered electron systems are calculated within dynamical mean-field theory applied to the Bethe lattice, in which…
We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron…
We investigate the influence of an unoccupied band on the transport properties of a strongly correlated electron system. For that purpose, additional orbitals are coupled to a Hubbard model via hybridization. The filling is one electron per…
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…
We investigate quantum phase transitions in the extended periodic Anderson model, which includes electron correlations within and between itinerant and localized bands. We calculate zero and finite temperature properties of the system using…
Recent quantum-gas microscopy of ultracold atoms and scanning tunneling microscopy of the cuprates reveal new detailed information about doped Mott antiferromagnets, which can be compared with calculations. Using cellular dynamical…
We use determinant Quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the…
We review our recent results on Anderson localization in systems of two interacting particles coupled by contact interactions. Based on an exact mapping to an effective single-particle problem, we numerically investigate the occurrence of…
Metal-insulator transitions driven by disorder (Delta) and/or by electron correlations (U) are investigated within the Anderson-Hubbard model with local binary-alloy disorder using a simple but consistent mean-field approach. The Delta-U…
The insulator/metal transition induced by hole-doping due to neodymium vacancies of the Mott- Hubbard antiferromagnetic insulator, Nd1-xTiO3, is studied over the composition range 0.010(6) < x < 0.243(10). Insulating p-types conduction is…
We investigate the effect of hole and electron doping to half-filling in the periodic Anderson model on a triangular lattice by the Hartree-Fock approximation at zero temperature. At half-filling, the system exhibits a partially disordered…
We show numerically that the nature of the doping induced metal-insulator transition in the two-dimensional Hubbard model is radically altered by the inclusion of a term, $W$, which depends upon a square of a single-particle…
We present a detailed, quantitative study of the competition between interaction- and disorder-induced effects in electronic systems. For this the Anderson-Hubbard model with diagonal disorder is investigated analytically and by Quantum…
We present a theory describing the mechanism for the two-dimensional (2D) metal-insulator transition (MIT) in absence of disorder. A two-band Hubbard model is introduced, describing vacancy-interstitial pair excitations within the Wigner…
We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator…
This paper details the investigation of the influence of different disorders in two-dimensional topological insulator systems. Unlike the phase transitions to topological Anderson insulator induced by normal Anderson disorder, a different…