Related papers: An unexplored MBE growth mode reveals new properti…
Superconductivity has been found in RuN films obtained by reactive magnetron sputtering. This is a novel member of the metal nitride superconductors family. The critical temperature of the superconducting transition varies depending on the…
NbN films are grown on c-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the film are characterized to demonstrate that growth parameters such as substrate temperature and active…
We report molecular beam epitaxy synthesis of vacancy-ordered rocksalt NbO thin films which display superconductivity. A comparative study of substrates identifies Al$_2$O$_3$ (0001) as the optimal platform for realizing high-quality,…
We report on \textit{in situ} growth of crystalline Al and Nb shells on InAs nanowires. The nanowires are grown on Si(111) substrates by molecular beam epitaxy (MBE) without foreign catalysts in the vapor-solid mode. The metal shells are…
We report growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to…
RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN (0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is found to lead to a face centered cubic (rock-salt) crystal structure with (111) out-of-plane…
Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures ($T_c$ $\sim$ 16.5 K) and largest gap among conventional superconductors.…
We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultra-high vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the…
Understanding fundamental properties of materials is necessary for all modern electronic technologies. Toward this end, the fabrication of new ultrapure thin film materials is critical to discover and understand novel properties that can…
This study investigates the molecular beam epitaxial (MBE) growth of titanium nitride (TiN) thin films, achieving a high residual resistivity ratio (RRR) of 15.8. We observed a strong correlation between growth temperature and crystalline…
MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE)…
We have measured the magnetotransport properties and Hall effect of a series of epitaxial NbN films grown on (100) oriented single crystalline MgO substrate under different conditions using reactive magnetron sputtering. Hall effect…
Continued advances in superconducting qubit performance require more detailed understandings of the many sources of decoherence. Within these devices, two-level systems arise due to defects, interfaces, and grain boundaries, and are thought…
A detailed study of the influence of molecular beam epitaxial growth conditions on the structural and magnetic characteristics of CuMnSb films on lattice matched GaSb is presented. For a set of nine 40~nm thick layers, the Mn and Sb fluxes…
Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconductors for light-emitting diodes and solar cells. This nitride…
Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on…
Epitaxial films including bulk-like cubic and wurtzite polymorphs of MnSb have been grown by molecular beam epitaxy on GaAs via careful control of the Sb4/Mn flux ratio. Nonzero-temperature density functional theory was used to predict ab…
As-grown superconducting MgB_2 thin films have been grown on SrTiO_3(001), MgO(001), and Al_2O_3(0001) substrates by a molecular beam epitaxy (MBE) method with novel co-evaporation conditions of low deposition rate in ultra-high vacuum. The…
We report on the MBE-growth and magnetotransport properties of p-type BeMnTe, a new ferromagnetic diluted magnetic semiconductor. BeMnTe thin film structures can be grown almost lattice matched to GaAs for Mn concentrations up to 10% using…
We report crystal growth and below 2.5K superconductivity of Nb0.25Bi2Se3. These crystals are grown by self flux method. The X-ray diffraction (XRD) pattern of as grown crystal flake shows (00l) plane (c-orientation) growth. The Rietveld…