Related papers: Isotopic study of Raman active phonon modes in $\b…
We employ a combined experimental-theoretical study of the first- and second-order Raman modes of monoclinic $\beta$-Ga$_{2}$O$_{3}$. The investigated materials is of particular interest due to its deep-UV bandgap paired with a high…
In this study, we performed comprehensive investigations on the Raman active phonon modes in cubic bixbyite In$_2$O$_3$, an important oxide based, wide-bandgap semiconductor. Fundamental insights into the lattice dynamics are revealed, by…
The Raman spectrum and particularly the Raman scattering intensities of monoclinic $\beta\text{-Ga}_2\text{O}_3$ are investigated by experiment and theory. The low symmetry of $\beta\text{-Ga}_2\text{O}_3$ results in a complex dependence of…
Isotopic substitution of boron and carbon is applied for the identification of the vibrational modes of heavily boron-doped diamond synthesized by high-pressure high-temperature technique. None of the bands in the Raman spectra are shifting…
The influence of Ga incorporation into cubic In$_2$O$_3$ on the electronic and vibrational properties is discussed for (In$_{1-x}$,Ga$_x$)$_2$O$_3$ alloy films grown by molecular beam epitaxy. Using spectroscopic ellipsometry, a linear…
The effect of pressure and temperature on the Raman-active phonon mode of osmium metal has been investigated for pressures up to 20 GPa and temperatures in the range 10--300 K. Under hydrostatic conditions (He pressure medium) the phonon…
In this study, we present a comprehensive analysis of the Raman active phonon modes in orthorhombic LaInO$_3$ based on a combination of polarization-angle resolved Raman spectroscopy and density functional theory calculations. By using…
The wide band gap semiconductor \b{eta}-Ga2O3 shows promise for applications in high-power and high-temperature electronics. The phonons of \b{eta}-Ga2O3 play a crucial role in determining its important material characteristics for these…
Advancement in quantum information and quantum technologies has ushered in a new era of technological revolution in large scale atomistic simulation and efficient system on a chip device fabrication. This has led to innovative ways of…
The novel ferroelectric-like structural transition observed in metallic LiOsO$_3$ [Y. Shi et al., Nat. Mater. 12, 1024 (2013)], has invoked many theoretical and experimental interests. In this work, we have performed polarized and…
Resonance Raman scattering, which probes electrons, phonons and their interplay in crystals, is extensively used in two-dimensional materials. Here we investigate Raman modes in MoSe$_2$ at different laser excitation energies from 2.33 eV…
The $\alpha$ phase of $Ga_{2}O_{3}$ is an ultra-wideband semiconductor with potential power electronics applications. In this work, we calculate the low field electron mobility in $\alpha-Ga_{2}O_{3}$ from first principles. The 10 atom unit…
We present a rationalization of the Raman spectra of orthorhombic and rhombohedral, stoichiometric and doped, manganese perovskites. In particular we study RMnO3 (R= La, Pr, Nd, Tb, Ho, Er, Y and Ca) and the different phases of Ca or Sr…
The Raman-active phonons in perovskite-like LaMn1-xCoxO3 (x = 0, 0.2, 0.3, 0.4, and 1.0) were studied by measuring Raman spectra at temperatures of 295 and 5 K. The changes in the spectra with Co doping are correlated with the decrease of…
We present results of our study of polarized Raman scattering and infrared reflectivity of rhombohedral ceramic La_1-ySr_yMn_1-xM_xO_3 manganites in the temperature range between 77 and 320K. In our samples, a part of the Mn atoms is…
We have performed polarized Raman scattering measurements on WTe$_2$, for which an extremely large positive magnetoresistance has been reported recently. We observe 5 A$_1$ phonon modes and 2 A$_2$ phonon modes out of 33 Raman active modes,…
In order to investigate the origin of the phase transition observed in NaV$_2$O$_5$, as well as its electronic structure, we have measured Raman intensities as a function of the laser wavelength above and below the phase transition…
Beta gallium oxide (\beta-Ga2O3) is an emerging ultrawide band gap (4.5 - 4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors for detecting gases and ultraviolet radiation. \beta-Ga2O3…
We report a comprehensive Raman study of the phonon behaviour in PdSe$_2$ in the temperature range of 5 K to 300 K. A remarkable change in the Raman spectrum is observed at 120 K: a significant enhancement of the out-of-plane phonon…
An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The…