Related papers: Isotopic study of Raman active phonon modes in $\b…
The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its…
In ionic Raman scattering, infrared-active phonons mediate a scattering process that results in the creation or destruction of a Raman-active phonon. This mechanism relies on nonlinear interactions between phonons and has in recent years…
We have performed polarized Raman scattering measurements on the newly discovered superconductor Ba$_{2}$Ti$_{2}$Fe$_{2}$As$_{4}$O$_{2}$ ($T_c = 21$ K). We observe seven out of eight Raman active modes, with frequencies in good accordance…
We discuss the mechanism of coherent phonon generation by Stimulated Ionic Raman Scattering, a process different from conventional excitation with near visible optical pulses. Ionic Raman scattering is driven by anharmonic coupling between…
In this study, we investigate the ion-irradiation-induced phase transition in gallium oxide (Ga2O3) from the $\beta$ to the $\gamma$ phase, the role of defects during the transformation, and the quality of the resulting crystal structure.…
High-pressure phase of boron oxide, orthorhombic \b{eta}-B2O3, has been studied in situ by synchrotron X-ray diffraction to 22 GPa and Raman scattering to 46 GPa at room temperature. The bulk modulus of \b{eta}-B2O3 has been found to be…
Strong electron-phonon interaction which limits electronic mobility of semiconductors can also have significant effects on phonon frequencies. The latter is the key to the use of Raman spectroscopy for nondestructive characterization of…
In a recent report sum-frequency excitation of a Raman-active phonon was experimentally demonstrated for the first time. This mechanism is the sibling of impulsive stimulated Raman scattering, in which difference-frequency components of a…
We investigate the structural, electronic, vibrational, power and transport properties of the $\beta$ allotrope of Ga$_2$O$_3$ from first-principles. We find phonon frequencies and elastic constants that reproduce the correct band ordering,…
The vibrational properties of ErTe$_3$ were investigated using Raman spectroscopy and analyzed on the basis of peculiarities of the RTe$_3$ crystal structure. Four Raman active modes for the undistorted structure, predicted by factor-group…
This work examines the carbon defects associated with recently reported and novel peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon ($^{12}C$) doping in the range of concentrations from $3.2*10^{17}$…
The quadruple Calcium manganite (CaMn7O12) is a multiferroic material that exhibits a giant magnetically-induced ferroelectric polarization which makes it very interesting for magnetoelectric applications. Here, we report the Raman…
We demonstrate a large-area passivation layer for graphene by mechanical transfer of ultrathin amorphous Ga$_2$O$_3$ synthesized on liquid Ga metal. A comparison of temperature-dependent electrical measurements of millimetre-scale…
The evolution of the optical phonons in layered semiconductor alloys SnSe1-xSx is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and…
The study of phonon coupling in doped semiconductors via electrical transport measurements is challenging due to unwanted temperature-induced effects such as dopant ionisation and parallel conduction. Here, we study phonon scattering in 2D…
We report high pressure Raman experiments of Black phosphorus up to 24 GPa. The line widths of first order Raman modes A$^1_g$, B$_{2g}$ and A$^2_g$ of the orthorhombic phase show a minimum at 1.1 GPa. Our first-principles density…
We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements,…
Synthetic powder, ore samples and mineral single crystals of goethite ($\alpha-$FeOOH) were investigated with polarized Raman spectroscopy at temperatures from 300 K to 473 K. The symmetry of the vibrational modes, observed in different…
The four A1-TO Gamma phonon frequencies in lithium tantalate are calculated in the frozen-phonon approach from first principles using the full-potential linearized augmented plane wave method. A good agreement with the experimental data…
The lattice dynamics of the $\rm YMnO_3$ magneto-electric compound has been investigated using density functional calculations, both in the ferroelectric and the paraelectric phases. The coherence between the computed and experimental data…