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As the field of terahertz (THz) photonics advances, we present a monolithic gallium arsenide (GaAs) disk-shaped whispering gallery mode resonator that has potential as a component in THz nonlinear optics. GaAs is a material with significant…

Recent years have seen extraordinary progress in creating quantum states of mechanical oscillators, leading to great interest in potential applications for such systems in both fundamental as well as applied quantum science. One example is…

Optomechanical systems based on nanophotonics are advancing the field of precision motion measurement, quantum control and nanomechanical sensing. In this context III-V semiconductors offer original assets like the heteroepitaxial growth of…

Optomechanical coupling between a mechanical oscillator and light trapped in a cavity increases when the coupling takes place in a reduced volume. Here we demonstrate a GaAs semiconductor optomechanical disk system where both optical and…

Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a…

Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear optical coefficients and uncommon interband optical selection rules, making it interesting for optoelectronic and spintronic applications. In this…

Materials Science · Physics 2017-06-15 Alaric Bergeron , John Ibrahim , Richard Leonelli , Sébastien Francoeur

Recent experiments demonstrated that GaAs-AlAs based micropillar cavities are promising systems for quantum optomechanics, allowing the simultaneous three-dimensional confinement of near-infrared photons and acoustic phonons in the 18-100…

Gallium arsenide optical resonators have been identified as platforms for light-matter interactions ranging from optomechanics to quantum electrodynamics involving nonlinear optics. Here, we present a 5-mm-diameter whispering gallery mode…

Beta gallium oxide (\beta-Ga2O3) is an emerging ultrawide band gap (4.5 - 4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors for detecting gases and ultraviolet radiation. \beta-Ga2O3…

Whispering gallery modes in GaAs disk resonators reach half a million of optical quality factor. These high Qs remain still well below the ultimate design limit set by bending losses. Here we investigate the origin of residual optical…

We report on a systematic study of nanomechanical dissipation in high-frequency (approximatively 300 MHz) gallium arsenide optomechanical disk resonators, in conditions where clamping and fluidic losses are negligible. Phonon-phonon…

In the field of quantum computation and communication there is a compelling need for quantum-coherent frequency conversion between microwave electronics and infra-red optics. A promising platform for this is an optomechanical crystal…

We analyze the magnitude of the radiation pressure and electrostrictive stresses exerted by light confined inside GaAs semiconductor WGM optomechanical disk resonators, through analytical and numerical means, and find the electrostrictive…

We report on wavelength-sized GaAs optomechanical disk resonators showing ultra-strong optomechanical interaction. We observe optical transduction of a disk mechanical breathing mode with 1.4 GHz frequency and effective mass of ~ 2 pg. The…

Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions: large material nonlinearities, maturely established nanoscopic structuring through epitaxial growth and lithography, and a large band…

Optics · Physics 2021-02-03 Marlon Placke , Sven Ramelow

Chip-based cavity optomechanical systems are being considered for applications in sensing, metrology, and quantum information science. Critical to their development is an understanding of how the optical and mechanical modes interact,…

We present a simple fabrication method for the realization of suspended GaAs nanomembranes for cavity quantum optomechanics experiments. GaAs nanomembranes with an area of 1.36 mm by 1.91 mm and a thickness of 160 nm are obtained by using a…

Mesoscale and Nanoscale Physics · Physics 2015-05-30 Jin Liu , Koji Usami , Andreas Naesby , Tolga Bagci , Eugene S. Polzik , Peter Lodahl , Søren Stobbe

Guiding and manipulating GHz frequency acoustic waves in $\mu$m-scale waveguides and resonators opens up new degrees of freedom to manipulate radio frequency (RF) signals in chip-scale platforms. A critical requirement for enabling…

Applied Physics · Physics 2024-12-17 Mahmut Bicer , Krishna C Balram

Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise…

The recent progress in integrated quantum optics has set the stage for the development of an integrated platform for quantum information processing with photons, with potential applications in quantum simulation. Among the different…

Mesoscale and Nanoscale Physics · Physics 2016-08-02 Christof P. Dietrich , Andrea Fiore , Mark G. Thompson , Martin Kamp , Sven Höfling
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