Related papers: Bit Parallel 6T SRAM In-memory Computing with Reco…

In this paper, we propose a novel memory-centric scheme based on CMOS SRAM for acceleration of data intensive applications. Our proposal aims at dynamically increasing the on-chip memory storage capacity of SRAM arrays on-demand. The…

The SRAM cell is made up of latch, which ensures that the cell data is preserved as long as power is turned on and refresh operation is not required for the SRAM cell. SRAM is widely used for on-chip cache memory in microprocessors, game…

Compute-in-memory (CiM) is a promising approach to improving the computing speed and energy efficiency in dataintensive applications. Beyond existing CiM techniques of bitwise logic-in-memory operations and dot product operations, this…

This paper presents a novel circuit (AID) to improve the accuracy of an energy-efficient in-memory multiplier using a standard 6T-SRAM. The state-of-the-art discharge-based in-SRAM multiplication accelerators suffer from a non-linear…

This paper presents a low cost PMOS-based 8T (P-8T) SRAM Compute-In-Memory (CIM) architecture that efficiently per-forms the multiply-accumulate (MAC) operations between 4-bit input activations and 8-bit weights. First, bit-line (BL)…

Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we…

Computing-in-memory (CIM) has been demonstrated across various memory technologies, ranging from memristive crossbars performing analog dot-product computations to large-scale digital bitwise operations in commodity DRAM and other proposed…

To support emerging applications ranging from holographic communications to extended reality, next-generation mobile wireless communication systems require ultra-fast and energy-efficient baseband processors. Traditional complementary…

This paper addresses a novel five-transistor (5T) CMOS SRAM design with high performance and reliability in 65nm CMOS, and illustrates how it reduces the dynamic power consumption in comparison with the conventional and low-power 6T SRAM…

Performing data-intensive tasks in the von Neumann architecture is challenging to achieve both high performance and power efficiency due to the memory wall bottleneck. Computing-in-memory (CiM) is a promising mitigation approach by enabling…

Combinatorial optimization problems are funda- mental for various fields ranging from finance to wireless net- works. This work presents a simulated bifurcation (SB) Ising solver in CMOS for NP-hard optimization problems. Analog domain…

In this paper, we present a new 9T SRAM cell that has good write-ability and improves read stability at the same time. Simulation results show that the proposed design increases Read SNM (RSNM) and Ion/Ioff of read path by 219% and 113%,…

In this work, we present a hybrid memory bit cell - collocated SRAM and DRAM (CRAM) consisting of 11 transistors for in-memory computing (IMC) based image restoration (IR) and region proposal (RP). A robust RP updated algorithm is proposed…

This paper presents a novel architecture utilizing a 10T SRAM cell for XNOR-based in-memory computing, aimed at mitigating the extensive routing challenges typically encountered in conventional in-memory computing systems. By integrating a…

Multilayered artificial neural networks (ANN) have found widespread utility in classification and recognition applications. The scale and complexity of such networks together with the inadequacies of general purpose computing platforms have…

Charge-domain compute-in-memory (CIM) SRAMs have recently become an enticing compromise between computing efficiency and accuracy to process sub-8b convolutional neural networks (CNNs) at the edge. Yet, they commonly make use of a fixed…

This paper obtains fundamental limits on the computational precision of in-memory computing architectures (IMCs). An IMC noise model and associated SNR metrics are defined and their interrelationships analyzed to show that the accuracy of…

In-memory computing (IMC) has been shown to be a promising approach for solving binary optimization problems while significantly reducing energy and latency. Building on the advantages of parallel computation, we propose an IMC-compatible…

Bit-serial Processing-In-Memory (PIM) is an attractive paradigm for accelerator architectures, for parallel workloads such as Deep Learning (DL), because of its capability to achieve massive data parallelism at a low area overhead and…

Today's high-performance architectures are increasingly constrained by data movement latency and energy overhead, as the slowdown of single-core performance scaling coincides with the rise of highly data-intensive workloads. In-memory…