Related papers: Scanning electron diffraction tomography of strain
During the last few years, serial electron crystallography (Serial Electron Diffraction, SerialED) has been gaining attention for the structure determination of crystalline compounds that are sensitive to the irradiation of the electron…
Transmission electron diffraction is a powerful and versatile structural probe for the characterization of a broad range of materials, from nanocrystalline thin films to single crystals. With recent developments in fast electron detectors…
Three-dimensional electron diffraction (3D ED) has emerged as a powerful method for solving the structures of sub-micron-sized particles down to nanoparticles. However, it faces technical challenges when applied to beam-sensitive samples or…
Scanning X-ray nanodiffraction microscopy is a powerful technique for spatially resolving nanoscale structural morphologies by diffraction contrast. One of the critical challenges in experimental nanodiffraction data analysis is posed by…
The structure of low-carbon steel after twist extrusion is tested with using electron backscattered diffraction. It has been shown that warm twist extrusion results in grain refinement with conservation of a substantial part of high-angle…
Advancements in fast electron detectors have enabled the statistically significant sampling of crystal structures on the nanometre scale by means of Scanning Electron Nanobeam Diffraction (SEND). Characterisation of structural similarity…
Elastic strain engineering utilizes stress to realize unusual material properties. For instance, strain can be used to enhance the electron mobility of a semiconductor, enabling more efficient solar cells and smaller, faster transistors. In…
Technological developments in high resolution time-of-flight neutron detectors have raised the prospect of tomographic reconstruction of elastic strain fields from Bragg-edge strain images. This approach holds the potential to provide a…
Strain engineering allows the physical properties of materials and devices to be widely tailored, as paradigmatically demonstrated by strained transistors and semiconductor lasers employed in consumer electronics. For this reason, its…
Strain engineering in semiconductor transistor devices has become vital in the semiconductor industry due to the ever increasing need for performance enhancement at the nanoscale. Raman spectroscopy is a non-invasive measurement technique…
Strain and defects in crystalline materials are responsible for the distinct mechanical, electric and magnetic properties of a desired material, making their study an essential task in material characterization, fabrication and design.…
Precession of a converged beam during acquisition of a 4D-STEM dataset improves strain, orientation, and phase mapping accuracy by averaging over continuous angles of illumination. Precession experiments usually rely on integrated systems,…
Atomic resolution imaging in transmission electron microscopy (TEM) and scanning TEM (STEM) of light elements in electron-transparent materials has long been a challenge. Biomolecular materials, for example, are rapidly altered when…
We introduce a novel reflection-mode diffraction tomography technique that enables simultaneous recovery of forward and backward scattering information for high-resolution 3D refractive index reconstruction. Our technique works by imaging a…
Lattice strain measurement of nanoscale semiconductor devices is crucial for the semiconductor industry as strain substantially improves the electrical performance of transistors. High resolution scanning transmission electron microscopy…
Proton radiography is a widely-fielded diagnostic used to measure magnetic structures in plasma. The deflection of protons with multi-MeV kinetic energy by the magnetic fields is used to infer their path-integrated field strength. Here, the…
Eigenstrain tomography combines diffraction-based strain measurement with elasticity theory to reconstruct full three-dimensional residual stress fields within solids. Notwithstanding a number of recent examples, the uniqueness of such…
Strain engineering is a powerful tool for tuning the electronic, magnetic, and topological properties of two-dimensional (2D) materials and thin films - particularly at high values of strain (>3%) where many electronic, magnetic, and…
We present the development of extended diffraction tomography, a new approach to the solution of the linear seismic waveform inversion problem. This method has several appealing features, such as the use of arbitrary depth-dependent…
A new method for dark field imaging is introduced which uses scanned electron diffraction (or 4DSTEM - 4-dimensional scanning transmission electron microscopy) datasets as its input. Instead of working on simple summation of intensity, it…