Related papers: Silicon quantum dot devices with a self-aligned se…
Motivated by recent experiments of Zajac et al. [arXiv:1708.03530], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient.…
The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits…
We study the spin-dependent transport properties of a spin valve based on a double quantum dot. Each quantum dot is assumed to be strongly coupled to its own ferromagnetic lead, while the coupling between the dots is relatively weak. The…
We present an approach for entangling electron spin qubits localized on spatially separated impurity atoms or quantum dots via a multi-electron, two-level quantum dot. The effective exchange interaction mediated by the dot can be understood…
We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an…
Hole spin qubits are frontrunner platforms for scalable quantum computers because of their large spin-orbit interaction which enables ultrafast all-electric qubit control at low power. The fastest spin qubits to date are defined in long…
We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting…
We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state…
Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could…
We have investigated coherent time evolution of pseudo-molecular states of an isolated (leadless) silicon double quantum-dot, where operations are carried out via capacitively-coupled elements. Manipulation is performed by short pulses…
We report the realization of a quadruple quantum dot device in a square-like configuration where a single electron can be transferred on a closed path free of other electrons. By studying the stability diagrams of this system, we…
Planar germanium quantum wells have recently been shown to host hard-gapped superconductivity. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear…
We study exchange coupling in Si double quantum dots, which have been proposed as suitable candidates for spin qubits due to their long spin coherence times. We discuss in detail two alternative schemes which have been proposed for…
We present the results of a finite-element solution of the Laplace equation for the silicon-based trench-isolated double quantum-dot and the capacitively-coupled single-electron transistor device architecture. This system is a candidate for…
Holes in germanium (Ge) exhibit strong spin-orbit interaction, which can be exploited for fast and all-electrical manipulation of spin states. Here, we report transport experiments in a tunable Ge hut wire hole double quantum dot. We…
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required,…
Achieving control over the electron spin in quantum dots (artificial atoms) or real atoms promises access to new technologies in conventional and in quantum information processing. Here we review our proposal for quantum computing with…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and…
Exchange-coupled singlet-triplet spin qubits in two gate-defined double quantum dots are considered theoretically. Using charge density operators to describe the double-dot orbital states, we calculate the Coulomb couplings between the…