Related papers: Melting and crystallization in layered film system…
The results of studies of supercooling upon crystallization value of Bi, Sn and Pb nanosized particles on the Al substrate and between the Al layers have been presented. It has been shown the efficiency of usage of layered film systems for…
Using molecular dynamics (MD) simulation, we have calculated the melting temperature of two-dimensional electron systems on $ 240$\AA-$ 500$\AA helium films supported by substrates of dielectric constants $ \epsilon_{s}=2.2-11.9$ at areal…
The report studies transformation of a Ge granular film deposited at room temperature on the Si(001) surface to the Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600C. As a result of the short-term annealing at…
The monograph summarizes the studies of the temperature limits for the existence of a supercooled liquid phase of the components of nanodisperse structures. Original in situ methods for studying supercooling during crystallization in…
Control of the crystallization process at the microscopic level makes it possible to generate the nanocrystalline samples with the desired structural and morphological properties, that is of great importance for modern industry. In the…
Below the melting temperature $T_m$ crystals are the stable phase of typical elemental or molecular systems. However, cooling down a liquid below $T_m$, crystallization is anything but inevitable. The liquid can be supercooled, eventually…
The present study reports Al induced crystallization (AIC) of amorphous (a)-SiGe in Al-Ge-Si ternary system at low temperature ~ 350 degree C. In addition to crystallization, the isothermal annealing of a-SiGe/AlOx/Al/corning-glass (CG)…
Ultrashort pulsed laser annealing is an efficient technique for crystallizing amorphous semiconductors with the possibility to obtain polycrystalline films at low temperatures, below the melting point, through non-thermal processes. Here, a…
The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room…
A molecular dynamics simulation of sublimation of silicene and silicon films of different thikness is performed. It is shown that thiner films sublimate at lower temperatures. The sublimation temperature comes to a saturated value of…
Thermal stability of silicene and thin silicon films is studied by molecular dynamics using two machine-learning potentials, SNAP and GAP. For SNAP potential, systems ranging from a single silicene layer to films of 36 layers are…
X-ray reflectivity measurements of the binary liquid Ga-Bi alloy reveal a dramatically different surface structure above and below the monotectic temperature $T_{mono}=222^{\circ}$ C. A Gibbs-adsorbed Bi monolayer resides at the surface at…
Difference in nucleation of Ge quantum dots during Ge deposition at low (< 600C) and high (> 600C) temperatures on the Si(001) surface is studied by high resolution scanning tunneling microscopy. Two process resulting in appearance of…
Measurements of resistance vs. temperature have been carried out on a sequence of quench-condensed ultrathin films of amorphous bismuth (a-Bi). The resistance below about 0.1K was found to be temperature independent in a range of films with…
We report on the temperature stability of pseudomorphic GeSn films grown by molecular beam epitaxy on Ge(001) substrates. Both the growth temperature-dependence and the influence of post-growth annealing steps were investigated. In either…
Computer simulations of contact melting and associated interfacial phenomena in binary eutectic systems were performed on the basis of the standard phase-field model with miscibility gap in solid state. It is shown that the model predicts…
The dynamic and static properties of a supercooled (non-entangled) polymer melt are investigated via molecular dynamics (MD) simulations. The system is confined between two completely smooth and purely repulsive walls. The wall-to-wall…
Fe and FeH form a binary eutectic system above ~40 GPa. Here we performed melting experiments in a laser-heated diamond-anvil cell (DAC) and obtained the Fe-FeH eutectic melting curve between 52 and 175 GPa. Its extrapolation shows the…
We have studied thermodynamics of the Mg-B system with the modeling technique CALPHAD using a computerized optimization procedure. Temperature-composition, pressure-composition, and pressure-temperature phase diagrams under different…
Current-voltage (I-V) characteristics of quench condensed, superconducting, ultrathin Bi films in a magnetic field are reported. These show hysteresis for all films, grown both with and without thin Ge underlayers. Films on Ge underlayers,…