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Asymptotic efficiency (high output without droop) was recently reported for OLEDS in which a thin emitter layer is located at the anti-node in a resonant microcavity. Here we extend our theoretical analysis to treat multi-mode devices with…

We present hybrid-integrated extended cavity diode lasers tunable around 637 nm, with a gain-wide spectral coverage of 8 nm. This tuning range allows addressing the zero-phonon line of nitrogen vacancy centers and includes the wavelength of…

Efficient electroluminescence of silicon light emitting p-n diodes with different sizes and shapes is investigated at room temperature. High quantum efficiency of the diodes, a long linear dependence of the electroluminescence intensity on…

This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer…

Colloidal quantum dots are promising next-generation phosphors to enhance the color rendition of light-emitting devices (LEDs) while minimizing the brightness drop. In order to exploit the beneficial tunability of quantum dots for highly…

We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer…

Efficient generation of radiation in the mid- and far- infrared relies primarily on lasers and coherent nonlinear optical phenomena driven by lasers. This wavelength range lacks of luminescent devices because the spontaneous emission rate…

An OLED architecture is described in which a thin emitter layer is located at the anti-node of a resonant microcavity. In two realizations, the mode space is constrained by either multi-layer mirrors or by an emitter with transition dipole…

We present a novel approach for achieving tightly concentrated optical field by a hybrid photonic-plasmonic device in an integrated platform, which is a triangle-shaped metal taper mounted on top of a dielectric waveguide. This device,…

The p-n diodes represent the most fundamental device building block for diverse optoelectronic functions, but are difficult to achieve in atomically thin transition metal dichalcogenides (TMDs) due to the inability to selectively dope them…

In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of…

Self assembled AlGaN polarization-induced nanowire light emitting diodes (PINLEDs) with Gd-doped AlN active regions are prepared by plasma-assisted molecular beam epitaxy on Si substrates. Atomically sharp electroluminescence (EL) from Gd…

A key component for optical on-chip communication is an efficient light source. However, to enable low energy per bit communication and local integration with Si CMOS, devices need to be further scaled down. In this work, we fabricate…

We present a comprehensive model to analyze, quantitatively, and predict the process of degradation of organic light-emitting diodes (OLEDs) considering all possible degradation mechanisms, i.e., polaron, exciton, exciton-polaron…

The lack of high power integrated lasers have been limiting silicon photonics. Despite much progress made in chip-scale laser integration, power remains below the level required for key applications. The main inhibiting factor for high…

We realize a fiber Bragg grating InGaN based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrow band fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency…

We demonstrate a novel method for nanowire formation by natural selection during wet chemical etching in boiling Phosphoric acid. It is observed that wire lateral dimensions of sub-10 nm and lengths of 700 nm or more have been naturally…

With the advances in the technology of materials based on GaN, high brightness white light emitting diodes (LEDs) have flourished over the past few years and have shown to be very promising in many new illumination applications such as…

We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip.…

White light emitting diodes based on III-nitride InGaN/GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phosphor-converted white LEDs have high electricity-to-light…