Related papers: Recent advances, perspectives and challenges in fe…
We have carried out calculations of current-voltage characteristics for the electron tunnel current through a junction with a thin insulating ferroelectric barrier assuming that interface transmissions for the left and right interfaces…
Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes (FeDs) are two-terminal NVM devices exhibiting rectifying…
In this study, we propose a measurement technique for evaluating ferroelectric polarization characteristics in ferroelectric field-effect transistors (FeFETs). Different from standard metal/ferroelectric/metal capacitors, the depletion and…
Conventionally, dc fields are used for switching dipole orientations in ferroelectrics. Such fields tilt the potential surface experienced by domain walls and thereby lower activation energies for their movement: escape from tilted…
Tunneling electroresistance (TER) effect is the change in the electrical resistance of a ferroelectric tunnel junction (FTJ) associated with polarization reversal in the ferroelectric barrier layer. Here we predict that a FTJ with a…
Introducing foreign ions, atoms, or molecules into emerging functional materials is crucial for manipulating material physical properties and innovating device applications. The intercalation of emerging new materials can induce multiple…
We report the prediction and observation of supra-binary ferroelectricity in a ferroelectric nanowire (FNW) covered with a semi-cylindrical gate that provides an anisotropic electric field in the FNW. There are gate-voltage-driven…
Ferroelectricity, a hallmark of spontaneous inversion-symmetry breaking, has been a central concept in condensed matter physics and functional materials research, yet recent discoveries are revealing that switchable polarization can emerge…
Josephson junctions containing ferromagnetic materials have attracted intense interest both because of their unusual physical properties and because they have potential application for cryogenic memory. There are two ways to store…
Over the past decades, the relentless scaling and mass production of flash memory have underpinned the data-centric era. Yet charge-trap-based 3D NAND flash is now constrained by intrinsic physical and architectural limits, including…
Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to…
Non-equilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schr\"odinger equation for electron tunneling in the presence…
In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach to achieving ultra-low power spintronic devices via suppressing Joule heating. In this article,…
Through stacking engineering of two-dimensional (2D) materials, a switchable interface polarization can be generated through interlayer sliding, so called sliding ferroelectricity, which is advantageous over the traditional ferroelectricity…
Neuromorphic devices have gained significant attention as potential building blocks for the next generation of computing technologies owing to their ability to emulate the functionalities of biological nervous systems. The essential…
CMOS-compatible HfO2-based ferroelectric tunnel junction (FTJ) has attracted significant attention as a promising candidate for in-memory computing (IMC) due to its extremely low power consumption. However, conventional FTJs face inherent…
A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic devices. In parallel, Hafnia based ferroelectrics are showing…
Fluid ferroelectrics, a recently discovered class of liquid crystals that exhibit switchable, long-range polar order, offer opportunities in ultrafast electro-optic technologies, responsive soft matter, and next-generation energy materials.…
Artificial synapse is a key element of future brain-inspired neuromorphic computing systems implemented in hardware. This work presents a graphene synaptic transistor based on all-technology-compatible materials that exhibits highly tunable…
Beyond a conventional classification of ferroelectricity, there is a class of materials where electronic degrees of freedom and electronic interactions are directly responsible for electric polarization and ferroelectric transition. This is…