Related papers: One nanometer HfO$_2$-based ferroelectric tunnel j…
We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of…
Antiferromagnetic Tunnel Junctions (AFMTJs) offer picosecond switching and high integration density for in-memory computing, but their ultrafast dynamics and low tunnel magnetoresistance (TMR) make state-of-the-art MRAM interfaces…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enlarge junction tunnel electroresistance (TER). Half-doped…
Large magnetoresistance effect controlled by electric field rather than magnetic field or electric current is a preferable routine for designing low power consumption magnetoresistance-based spintronic devices. Here we propose an…
HRTEM, nano-beam electronic diffraction, energy dispersive X-rays scanning spectroscopy, Vibrating Sample Magnetometry (VSM) and FerroMagnetic Resonance (FMR) techniques are used in view of comparing (static and dynamic) magnetic and…
We report on tunnelling magnetoresistance (TMR), current-voltage (IV) characteristics and low frequency noise in epitaxially grown Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) with dimensions from 2x2 to 20x20 um2. The…
Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free…
We report the fabrication and testing, at 4.2 K, of an SISFS device, where S, F, and I denote a superconductor (Nb), a ferromagnetic material (permalloy), and an insulator (AlOx), respectively. The F layer covers about one half of the top…
Ferroelectric HfO2 is a promising candidate for next-generation memory devices due to its CMOS compatibility and ability to retain polarization at nanometer scales. However, the polar orthorhombic phase (Pca2_1) responsible for…
Josephson junctions containing ferromagnetic materials have attracted intense interest both because of their unusual physical properties and because they have potential application for cryogenic memory. There are two ways to store…
Ferroelectricity in the complementary metal-oxide semiconductor (CMOS)-compatible hafnia (HfO$_2$) is crucial for the fabrication of high-integration nonvolatile memory devices. However, the capture of ferroelectricity in HfO$_2$ requires…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…
We study the Josephson effect in one-dimensional SF$_1$F$_2$S junctions, which consist of conventional s-wave superconductors (S) connected by two ferromagnetic layers (F$_1$ and F$_2$). At low temperatures, the potential barrier at the…
We report on spin polarization reduction by incoherent tunneling in realistic single crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJ) compared to reference Fe/MgO/Fe. A large density of misfit dislocations in the Heusler based…
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…
The magnetic tunnel junction is a cornerstone of spintronic devices and circuits, providing the main way to convert between magnetic and electrical information. In state-of-the-art magnetic tunnel junctions, magnesium oxide is used as the…
Complex oxide systems have attracted considerable attention because of their fascinating properties, including the magnetic ordering at the conducting interface between two band insulators, such as LaAlO3 (LAO) and SrTiO3 (STO). However,…
Despite progress in HfO2 thin-film ferroelectrics, issues like high coercive fields persist, and the dynamics of twisted ferroelectricity remain largely unexplored. Here, we explore how sliding and twisting in bilayer HfO2 enables low…