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3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial…
Electron Holographic Tomography was used to obtain 3-dimensional reconstructions of the morphology and electrostatic potential gradient of axial GaInP/InP nanowire tunnel diodes. Crystal growth was carried out in two opposite directions:…
The p-n junction constructed from the group-10 TMDCs, or namely, transition metal dichalcogenides with an intrinsic layered structure, is not considerably reported. This study presents a mechanical exfoliation-based technique to prepare…
We have been developing silicon-on-insulator (SOI) pixel detectors with a pinned depleted diode (PDD) structure, named "XRPIX", for X-ray astronomy. The PDD structure is formed in a thick p-type substrate, to which high negative voltage is…
High precision placement and integration of color centers in a silicon-based nanosystem, such as a nanowire (NW) array, exhibiting high integration functionality and high photoluminescence (PL) yield can serve as a critical building block…
Molecular zero-dimensional (0D) halide perovskite-inspired cesium copper iodide (Cs3Cu2I5) is a highly promising candidate for optoelectronic applications due to their low toxicity, high stability, and intense blue emission. However, their…
Junctions are fundamental elements that support qubit locomotion in two-dimensional ion trap arrays and enhance connectivity in emerging trapped-ion quantum computers. In surface ion traps they have typically been implemented by shaping…
Two-dimensional polyaniline with C$_3$N stoichiometry, is a newly fabricated layered material that has been expected to possess fascinating electronic, thermal, mechanical and chemical properties. The nature of its counterpart…
Short-wave infrared (SWIR) imaging arrays have demonstrated great potential in applications spanning from military to civilian consumer electronics. However, the current focal plane arrays (FPAs), which are based on compound semiconductors,…
Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community. 4H-Silicon Carbide (SiC), especially, is an attractive…
The ePIC detector is being designed as a general-purpose detector to deliver the full physics program of the Electron-Ion Collider (EIC) in BNL USA. Particle Identification (PID) plays a crucial role in the EIC physics program. Over a wide…
We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic…
There is an increasing need for silicon-compatible high bandwidth extended-short wave infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable optoelectronic devices. These systems are quintessential to address…
Understanding irradiation-induced strain in silicon carbide (SiC) is essential for designing radiation-tolerant ceramic materials. However, conventional methods often fail to resolve nanoscale strain gradients, especially in polycrystalline…
X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a…
Nanoscale silicon p(+)-n junctions with very high concentration of boron, 5 10^21 cm-3, are found to demonstrate interesting optical properties. Emission band dominated in near-infrared electroluminescence (EL) spectra possesses high degree…
Photonic integrated circuit (PIC) phased arrays can be an enabling technology for a broad range of applications including free-space laser communications on compact moving platforms. However, scaling PIC phased arrays to a large number of…
Particle IDentification (PID) is a central requirement of the experiments at the future EIC. Hadron PID at high momenta by RICH techniques requires the use of low density gaseous radiators, where the challenge is the limited length of the…
Silicon carbide (SiC) is a promising platform for scalable quantum technologies owing to its well-established, wafer-scale industrial processing. SiC also hosts a variety of optically active color centres including the nitrogen vacancy…
The dual-radiator RICH (dRICH) detector of the ePIC experiment will employ over 300000 SiPM pixels as photosensors, organized into more than 1000 Photon Detection Units. Each PDU is a compact module, approximately 5x5x12 cm^3 in size,…