Related papers: $\alpha$-In$_2$Se$_3$ based Ferroelectric-Semicond…
Anisotropic magnetoresistance (AMR) offers a robust electrical readout of antiferromagnetic (AFM) states, playing a central role in the rapidly advancing field of AFM spintronics. Despite its great versatility, electrical probing of the…
Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von…
Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its…
The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM).…
Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Junctions (FTJs) are ultra low-power memory devices and are…
Van der Waals multiferroic tunnel junctions (vdW-MFTJs) with multiple nonvolatile resistive states are highly suitable for new physics and next-generation storage electronics. However, currently reported vdW-MFTJs are based on two types of…
Two-dimensional (2D) van der Waals ferroelectrics are recognized for enabling many applications, from memory and logic to neuromorphic computing, as well as transforming other materials to control electronic phase transitions and…
Non-volatile memories (NVMs) offer negligible leakage power consumption, high integration density, and data retention, but their non-volatility also raises the risk of data exposure. Conventional encryption techniques such as the Advanced…
The recent emergence of van der Waals (vdW) ferromagnets has opened new opportunities for designing spintronic devices. We theoretically investigate the coherent spin-dependent transport properties of the vdW ferromagnet Fe$_4$GeTe$_2$, by…
Following the discovery of graphene, interest in van der Waals (vdW) materials has surged; however, advancing physics beyond graphene requires quantum vdW materials platforms that host versatile, strongly interacting many-body states. Here,…
Ferroelectric tunnel junctions, in which ferroelectric polarization and quantum tunneling are closely coupled to induce the tunneling electroresistance (TER) effect, have attracted considerable interest due to their potential in…
With the ever-increasing energy need to process big data, the realization of low-power computing technologies, such as superconducting logic and memories, has become a pressing issue. Developing fast and non-volatile superconducting memory…
Here, we have investigated the thermoelectric properties of FeMnScGa alloy by combined use of full potential linearized augmented plane-wave (FP-LAPW) method and Boltzmann transport theory implemented in Wien2K and BoltzTraP code,…
In order to promote the development of the next generation of nano-spintronic devices, it is of great significance to tune the freedom of valley in two-dimensional (2D) materials. Here, we propose a mechanism for manipulating the valley and…
Superconductor-ferromagnet (S-F) interfaces in two-dimensional (2D) heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetism. The realization of such nanoscale heterostructures in van…
Two-dimensional (2D) Janus semiconductors with mirror asymmetry can introduce novel properties, such as large spin-orbit coupling (SOC) and normal piezoelectric polarization, which have attracted a great interest for their potential…
We assess the performance of nonempirical, truly nonlocal and semi-local functionals with regard to structural and thermal properties of $3d$, $4d$, and $5d$ non-magnetic transition metals. We focus on constraint-based functionals and…
As the first magnetic kagome material to exhibit the charge density wave (CDW) order, FeGe has attracted much attention in recent studies. Similar to AV$_{3}$Sb$_{5}$ (A = K, Cs, Rb), FeGe exhibits the CDW pattern with an in-plane 2$\times…