Related papers: Threshold Logic with Current-Driven Magnetic Domai…
A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is…
As an intriguing ultra-small particle-like magnetic texture, skyrmion has attracted lots of research interests in next-generation ultra-dense and low power magnetic memory/logic designs. Previous studies have demonstrated a single…
The end of Moore's law for CMOS technology has prompted the search for low-power computing alternatives, resulting in several promising proposals based on magnetic logic[1-8]. One approach aims at tailoring arrays of nanomagnetic islands in…
This paper presents a 2-output Spin-Wave Programmable Logic Gate structure able to simultaneously evaluate any pair of AND, NAND, OR, NOR, XOR, and XNOR Boolean functions. Our proposal provides the means for fanout achievement within the…
We demonstrate for the first time that functionally complete digital logic can be created by using three terminal devices each consisting of a magnetic tunnel junction (MTJ) and spin transfer torque (STT) element with a shared free magnetic…
Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in…
The basic building blocks for Resonant Tunnelling Diode (RTD) logic circuits are Threshold Gates (TGs) instead of the conventional Boolean gates (AND, OR, NAND, NOR) due to the fact that, when designing with RTDs, threshold gates can be…
Fundamentally, lithium niobate is an extremely good electrical insulator. However, this can change dramatically when 180{\deg} domain walls are present, as they are often found to be strongly conducting. Absolute conductivities depend on…
In this paper, we present a resistive switching memristor cell for implementing universal logic gates. The cell has a weighted control input whose resistance is set based on a control signal that generalizes the operational regime from NAND…
We propose magnetic threshold-logic (MTL) design based on non-volatile spin-torque switches. A threshold logic gate (TLG) performs summation of multiple inputs multiplied by a fixed set of weights and compares the sum with a threshold. MTL…
In nanoelectronic circuit synthesis, the majority gate and the inverter form the basic combinational logic primitives. This paper deduces the mathematical formulae to estimate the logical masking capability of majority gates, which are used…
A self-contained theory of the domain wall dynamics in ferromagnets under finite electric current is presented. The current is shown to have two effects; one is momentum transfer, which is proportional to the charge current and wall…
We show that current induced magneto-logic gates like AND, OR and NOT can be designed with the simple architecture involving a single nano spin-valve pillar, as an extension of our recent work on spin-torque-driven magneto-logic universal…
We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization…
Brain inspired circuits can provide an alternative solution to implement computing architectures taking advantage of fault tolerance and generalisation ability of logic gates. In this brief, we advance over the memristive threshold circuit…
Magnetic domain walls are information tokens in both logic and memory devices, and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical…
Current advances in emerging memory technologies enable novel and unconventional computing architectures for high-performance and low-power electronic systems, capable of carrying out massively parallel operations at the edge. One emerging…
Perpendicularly magnetized materials have attracted tremendous interest due to their high anisotropy, which results in extremely narrow, nano-sized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM)…
We propose model magneto-logic NOR and NAND gates using a spin valve pillar, wherein the logical operation is induced by spin-polarized currents which also form the logical inputs. The operation is facilitated by the simultaneous presence…
The switching time of a magnet in a spin current based majority gate depends on the input vector combination, and this often restricts the speed of majority-based circuits. To address this issue, this work proposes a novel two-phase scheme…