Related papers: Spin-orbit torque magnetization switching in MoTe2…
Owing to the unique features of low Gilbert damping, long spin-diffusion lengths and zero Ohmic losses, magnetic insulators are promising candidate materials for next-generation spintronic applications. However, due to the localized…
Spin-orbit torques are studied in Ta/TbFeCo patterned structures with a bulk perpendicular magnetic anisotropy (bulk-PMA) for the first time. The current-induced magnetization switching is investigated in the presence of a perpendicular,…
Organic semiconductors find increasing importance in spin transport devices due to the modulation and control of their properties through chemical synthetic versatility. The organic materials are used as interlayers between two ferromagnet…
We study current-induced torques in WTe2/permalloy bilayers as a function of WTe2 thickness. We measure the torques using both second-harmonic Hall and spin-torque ferromagnetic resonance measurements for samples with WTe2 thicknesses that…
We demonstrate a deterministic switching mechanism in collinear altermagnets driven by asymmetric sublattice spin currents. Unlike conventional antiferromagnets, where combined parity-time-reversal symmetry enforces purely staggered…
Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin…
Using the non-equilibrium Green's function technique, we calculate spin-orbit torques in a Mn$_2$Au/heavy-metal bilayer, where the heavy metal (HM) is W or Pt. Spin-orbit coupling (SOC) in the bulk of Mn$_2$Au generates strong fieldlike…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…
Strong magnetic field pulses associated with a relativistic electron bunch can imprint switching patterns in magnetic thin films that have uniaxial in-plane anisotropy. In experiments with Fe and FeCo alloy films the pattern shape reveals…
Spin-transfer and spin-orbit torques allow controlling magnetic degrees of freedom in various materials and devices. However, while the transfer of angular momenta between electrons has been widely studied, the contribution of nuclear spins…
Atomically thin MoSe2 is a promising platform for investigating quantum phenomena due to its large effective mass, high crystal quality, and strong spin-orbit coupling. In this work, we demonstrate a triple-gate device design with bismuth…
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…
Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and…
The spin-orbit interaction enables interconversion between a charge current and a spin current. It is usually believed that in a nonmagnetic metal (NM) or at a NM/ferromagnetic metal (FM) bilayer interface, the symmetry of spin-orbit…
Antiferromagnets and compensated ferrimagnets offer opportunities to investigate spin dynamics in the 'terahertz gap' because their resonance modes lie in the 0.3 THz to 3 THz range. Despite some inherent advantages when compared to…
Finding efficient ways of manipulating magnetic bits is one of the core goals in spintronic research. Electrically-generated spin-orbit torques (SOTs) are good candidates for this and the search for materials capable of generating…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
The discovery of the spin torque effect has made magnetic nanodevices realistic candidates for active elements of memory devices and applications. Magnetoresistive effects allow the read-out of increasingly small magnetic bits, and the spin…
Spin-to-charge conversion is an essential requirement for the implementation of spintronic devices. Recently, monolayers of semiconducting transition metal dichalcogenides (TMDs) have attracted considerable interest for spin-to-charge…
We experimentally study magnetization aging in a thin-film NiO/Permalloy bilayer. Aging characteristics are nearly independent of temperature below the exchange bias blocking temperature, but rapidly vary above it. The dependence on the…