Related papers: Visualizing an adjustable WO3/p-GaN heterojunction
In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$\beta$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer…
Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and…
Semiconductor p-n junctions are essential building blocks for modern electronics and optoelectronics. In conventional semiconductors, a p-n junction produces depletion regions of free charge carriers at equilibrium and built-in potentials…
The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these…
We report a novel approach for crafting robust diamond/\b{eta}-Ga2O3 hetero-p-n-junctions through the mechanical integration of their bulk materials. This resulting heterojunction, with a turn-on voltage of ~2.7 V at room temperature,…
Several pn junctions were constructed from mechanically exfoliated ultrawide bandgap (UWBG) beta-phase gallium oxide (\b{eta}-Ga2O3) and p-type gallium nitride (GaN). The mechanical exfoliation process, which is described in detail, is…
${\beta}$-Ga${_2}$O${_3}$ based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these…
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in…
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance.…
Combining experiment and theory, we investigate how the naturally created heterojunction at a graphene and metallic contact is modulated via interaction with molecular hydrogen (H2). Due to electrostatic interaction, a Cr/Au electrode…
One of the most fundamental devices for electronics and optoelectronics is the PN junction, which provides the functional element of diodes, bipolar transistors, photodetectors, LEDs, and solar cells, among many other devices. In…
Two-dimensional polyaniline with C$_3$N stoichiometry, is a newly fabricated layered material that has been expected to possess fascinating electronic, thermal, mechanical and chemical properties. The nature of its counterpart…
The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for…
n-Ga2O3/p-GaN heterojunction based photodetector devices are fabricated on Si-doped (-201) \beta-Ga2O3 epitaxial layers grown by pulsed laser deposition (PLD) technique on p-type c-GaN/sapphire templates. These devices demonstrate the…
Two-dimensional Janus van der Waals (vdW) heterojunctions, referring to the junction containing at least one Janus material, are found to exhibit tuneable electronic structures, wide light adsorption spectra, controllable contact…
Since the discovery of its photovoltaic properties organometallic salt CH$_3$NH$_3$PbI$_3$ became the subject of vivid interest. The material exhibits high light conversion efficiency, it lases in red color, and it can serve as the basis…
This work reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based super-heterojunction (SHJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to realize charge-balanced structures. The heterojunction…
Piezoelectric materials play a vital role in energy harvesting, piezotronics and various self-powered sensing applications. The piezoelectric strength of 2D materials is limited by the carrier charge screening, leading to reduced open…
Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to…
Ultrawide bandgap (UWBG) semiconductors exhibit exceptional electrical and thermal properties, offering strong potential for high power and high frequency electronics. However, efficient doping in UWBG materials is typically limited to…