Related papers: Convergence of defect energetics calculations
Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap E_g = 6 eV, containing a negatively charged boron vacancy…
Hexagonal Boron Nitride (h-BN) is a highly intriguing candidate for heterostructure optoelectronic applications, such as Deep Ultraviolet photodetectors, UV sensing and communication systems and solar cells. This is primarily due to its…
Hexagonal boron nitride (h-BN) has been recently found to host a variety of quantum point defects, which are promising candidates as single-photon sources for solid-state quantum nanophotonics applications. Most recently, optically…
Single photon emitters in hexagonal boron nitride have been extensively studied recently. Although unambiguous identification of the emitters is still under intense research, carbon related defects are believed to play a vital role for the…
Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with hBN flakes doped with…
Atomically thin hexagonal boron nitride (h-BN), especially monolayer, has garnered increasing attention due to its intriguing optical and light-matter-interaction properties. However, its intrinsic optical properties and electronic band…
Optically addressable spins associated with defects in wide-bandgap semiconductors are versatile platforms for quantum information processing and nanoscale sensing, where spin-dependent inter-system crossing (ISC) transitions facilitate…
The hexagonal boron nitride (hBN) encapsulation has been widely used in the electronics applications of 2D materials to improve device performance by protecting 2D materials against contamination and degradation. It is often assumed that…
Lattice deformation is a powerful way to engineer the properties of two-dimensional (2D) materials, making their precise measurement an important challenge for both fundamental science and technological applications. Here, we demonstrate…
Optically addressable spins in two-dimensional hexagonal boron nitride (hBN) attract widespread attention for their potential advantage in on-chip quantum devices, such as quantum sensors and quantum network. A variety of spin defects have…
Boron nitride (BN) is a structurally versatile insulator since it can be found in several crystalline structures with interesting mechanical and electrical properties, making this material attractive for technological applications. Seeking…
The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelectronic, nanophotonic, and quantum devices. Here we report on…
Two-dimensional hexagonal boron nitride (hBN) has been known to host a variety of quantum emitters with properties suitable for a broad range of quantum photonic applications. Among them, the negatively charged boron vacancy (VB-) defect…
Negatively charged boron vacancy (VB-) defects in hexagonal boron nitride (hBN) are promising for nanoscale-proximity quantum sensing. To evaluate their performance, it is important to characterize the spin coherence times T2* and T2. In…
We report on the detection and charge distribution analysis for nitrogen substitutional dopants in single layer graphene membranes by aberration-corrected high-resolution transmission electron microscopy (HRTEM). Further, we show that the…
Atom-like defects in two-dimensional (2D) hexagonal boron nitride (hBN) have recently emerged as a promising platform for quantum information science. Here we investigate single-photon emissions from atomic defects in boron nitride…
This paper presents first principles calculations of paramagnetic cubic CrN$_x$ with the aim to provide deeper insight into recently published transmission electron microscopy-based study on this material. Among several types of point…
Dielectrics with low loss at microwave frequencies are imperative for high-coherence solid-state quantum computing platforms. We study the dielectric loss of hexagonal boron nitride (hBN) thin films in the microwave regime by measuring the…
Color centers in hexagonal boron nitride (hBN) emerge as promising quantum light sources at room temperature, with potential applications in quantum communications, among others. The temporal coherence of emitted photons (i.e. their…
Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point. However, accessing the physics…