Related papers: YBCO-based non-volatile ReRAM tested in Low Earth …
BiFeO3 thin films are deposited on FTO coated glass substrates using a simple sol-gel deposition technique, limiting thickness about 70 nm and Ag/BiFeO3/FTO RRAM devices are prepared. The devices showed low-voltage bipolar switching with…
Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies…
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of…
YBCO, LSCO and Ru-1212 have been extensively studied by measuring the complex dynamic Young's modulus at 0.5-20 kHz between 1 and 900 K. The elastic energy loss is peaked at the temperatures where the relaxation rate of any microscopic…
Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…
Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising…
Resistive random access memories (ReRAMs) with a bilayer TaOx/HfO2 stack structure have shown unique multi-level resistive switching capabilities. However, the physical processes governing their behavior, and specifically the atomistic…
Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 films using Al(aluminum)/CoFe2O4/FTO(fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly…
We report first results obtained during the commissioning of the Laser Resonance Chromatography (LRC) apparatus, which is conceived to enable atomic structure investigations in the region of the heaviest elements beyond nobelium. In our…
The ramp reversal memory (RRM) is a non-volatile memory effect previously observed in correlated oxides exhibiting temperature-driven metal-insulator transitions (MITs). In essence, when a system displaying RRM is heated to a specific…
While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work,…
Control of oxygen vacancies by electrical currents in complex oxides such as YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO) has attracted considerable interest due to the relative simplicity of its implementation and its potential for both fundamental…
Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…
Thin films of the superconductor YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO) were modified by low-energy light-ion irradiation employing collimated or focused He$^+$ beams, and the long-term stability of irradiation-induced defects was investigated.…
Aims. To better understand the radiation environment in low Earth orbit (LEO), the analysis of in-situ observations of a variety of particles, at different atmospheric heights, and in a wide range of energies, is needed. Methods. We present…
This study proposes the realization of various virtual environments using a lower limb exoskeletal robot for futuristic gait rehabilitation. The proposed method allows the user to feel virtual gravity, buoyancy, and drag while actively…
Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in…
The translation of emerging application concepts that exploit Resistive Random Access Memory (ReRAM) into large-scale practical systems requires realistic, yet computationally efficient, empirical models that can capture all observed…
Low temperature magnetic and structural behavior of the extended Kagome system YBaCo4O7 has been studied by single crystal neutron diffraction and high-resolution powder X-ray diffraction. Long-range magnetic ordering associated with a…
Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlO$_{x}$-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/f$^{\gamma}$…