Related papers: YBCO-based non-volatile ReRAM tested in Low Earth …
The electronic transport properties and the magnetic susceptibility were measured in detail in $YBaCo_2O_{5.45}$. Close to the so-called metal-insulator transition, strong effects of resistance relaxation, a clear thermal hysteresis and a…
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
High-performance non-volatile resistive random access memories (ReRAM) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emergent Internet of Things (IOT) arena. Here, we…
The recent co-optimization of memristive technologies and programming algorithms enabled neural networks training with in-memory computing systems. In this context, novel analog filamentary conductive-metal-oxide (CMO)/HfOx redox-based…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
The electrical resistivity rho_c of the underdoped cuprate superconductor YBCO was measured perpendicular to the CuO_2 planes on ultra-high quality single crystals in magnetic fields large enough to suppress superconductivity. The…
The growing energy demands of information and communication technologies, driven by data-intensive computing and the von Neumann bottleneck, underscore the need for energy-efficient alternatives. Resistive random-access memory (RRAM)…
Electronic transport and magnetization measurements were performed on La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-\delta}$ (LCMO/YBCO) bilayers below the superconducting transition temperature in order to study the interaction between…
Electronic phases with symmetry properties matching those of conventional liquid crystals have recently been discovered in transport experiments on semiconductor heterostructures and metal oxides at milli-Kelvin temperatures. We report the…
Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…
The interplay between charge ordering and its manifestation in macroscopic electrical transport in low-dimensional materials is crucial for understanding resistive switching mechanisms. In this study, we investigate the electronic transport…
Current-voltage characteristics of Au~/~YBa$_2$Cu$_3$O$_{7-\delta}$ interfaces (Au/YBCO), built on optimally-doped YBCO thin films, grown by pulsed laser deposition, were measured as a function of temperature in the 50 K to 270 K range, for…
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…
The rapid growth of digital technology has driven the need for efficient storage solutions, positioning memristors as promising candidates for next-generation non-volatile memory (NVM) due to their superior electrical properties. Organic…
In this work the first results obtained by LabOSat-01 platform are presented. This platform was designed for testing custom devices on board of small satellites. Two LabOSat-01 type boards were launched and placed into Low Earth Orbit (LEO)…
Operating mechanical devices in low earth orbit (LEO) environment presents unique challenges due to adverse effects of the LEO environment on lubricants and materials in tribo-mechanisms. These challenges include corrosion due to atomic…
Resistive switching (RS) effect observed in capacitor-like metal/insulator/metal junctions belongs to the most promising candidates for next generation of memory cell technology. It is based upon a sudden change of the junction resistance…
Heteroepitaxially grown bilayers of ferromagnetic La$_{0.7}$Ca$_{0.3}$MnO$_3$ (LCMO) on top of superconducting YBa$_2$Cu$_3$O$_7$ (YBCO) thin films were investigated by focusing on electric transport properties as well as on magnetism and…
The field-effect-induced modulation of transport properties of 2-dimensional electron gases residing at the LaAlO$_3$/SrTiO$_3$ and LaGaO$_3$/SrTiO$_3$ interfaces has been investigated in a back-gate configuration. Both samples with…
Liquid free cryogenic devices are acquiring importance in basic science and engineering. But they can also lead to improvements in teaching low temperature an solid state physics to graduate students and specialists. Most of the devices are…