Related papers: Quantitative electrochemical control over optical …
A quantum computer is proposed in which information is stored in the two lowest electronic states of doped quantum dots (QDs). Many QDs are located in a microcavity. A pair of gates controls the energy levels in each QD. A Controlled Not…
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics1 and silicon photonics2,3 . The current technology is based either on costly III-V semiconductors that are not…
Achieving low-threshold infrared stimulated emission in solution-processed quantum dots is critical to enable real-life application including photonic integrated circuits (PICs), LIDAR application and optical telecommunication. However,…
Semiconductor nanolasers based on micro disks, photonic crystal cavities, and metallo-dielectric nanocavities have been studied during the last decade for on-chip light source applications. However, practical realization of low threshold,…
We use an improved version of the standard effective mass approximation model to describe quantum effects in nanometric semiconductor Quantum Dots (QDs). This allows analytic computation of relevant quantities to a very large extent. We…
Quantum key distribution (QKD offers a long-term solution to establish information-theoretically secure keys between two distant users. In practice, with a careful characterization of quantum sources and the decoy-state method,…
Quantum-dot light-emitting diodes (QLEDs) promise high-performance and cost-effective electroluminescent devices. However, shelf stability of QLEDs, a must for practical applications, is currently overlooked. Here we reveal that the…
To absorb the photons below the band-gap energy effectively, we proposed a quantum dot (QD) photocell modeled by multi-level system for the quantum yields and photo-to-charge efficiency limits. The theoretical results show the quantum…
Quantum-dot light-emitting diodes (QD-LEDs) promise a new generation of efficient, low-cost, large-area, and flexible electroluminescent devices. However, the inferior performance of green and blue QD-LEDs is hindering the commercialization…
In this work, we calculate material gain for long wavelength III-nitride InN and AlInN quantum dot (QD) structures. Strain and QD inhomogeneity are included in the calculations. The study covers (800-2300 nm) wavelength range which is…
Hybrid pumping appears as a promising compromise in order to reach the much coveted goal of an electrically pumped organic laser. In such configuration the organic material is optically pumped by an electrically pumped inorganic device on…
Nanolasers operate with a minimal amount of active material and low losses. In this regime, single layers of transition-metal dichalcogenides (TMDs) are being investigated as next generation gain materials due to their high quantum…
The authors report that anisotropic confining potentials in laterally-coupled semiconductor quantum dots (QDs) have large impacts in optical transitions and energies of inter-shell collective electronic excitations. The observed…
We review the progress and main challenges in implementing large-scale quantum computing by optical control of electron spins in quantum dots (QDs). Relevant systems include self-assembled QDs of III-V or II-VI compound semiconductors (such…
Coherent manipulation of quantum bits (qubits) on time scales much shorter than the coherence time is a key prerequisite for quantum information processing. Electron spins in quantum dots (QDs) are particularly attractive for…
The electrochemical gating technique is a powerful tool to tune the \textit{surface} electronic conduction properties of various materials by means of pure charge doping, but its efficiency is thought to be hampered in materials with a good…
We report a quantum dot microcavity laser with a cw sub-microwatt lasing threshold, where a significant reduction of the lasing threshold is observed when a single quantum dot (QD) state is aligned with a cavity mode. The quality factor…
We report thin-film InAs/GaAs quantum dot (QD) solar cells with $n-i-p{+}$ deep junction structure and planar back reflector fabricated by epitaxial lift-off (ELO) of full 3-inch wafers. External quantum efficiency measurements demonstrate…
Epitaxially grown quantum dots (QDs) are promising sources of non-classical states of light such as single photons and entangled photons. However, in order for them to be used as a resource for long-distance quantum communication,…
A multi-quantum wire laser operating in the 1-D ground state has been achieved in a very high uniformity structure that shows free exciton emission with unprecedented narrow width and low lasing threshold. Under optical pumping the…