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Here, we report the observation of a hitherto unreported optoelectronic effect, namely a light-induced diode-like response in multi-layered MoSe$_2$ field-effect transistors whose sense of current rectification is controllable through a…

Mesoscale and Nanoscale Physics · Physics 2015-11-16 Nihar R. Pradhan , Zhengguang Lu , Daniel Rhodes , Dmitry Smirnov , Efstratios Manousakis , Luis Balicas

Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications…

Materials Science · Physics 2016-02-17 Qi Feng , Faguang Yan , Wengang Luo , Kaiyou Wang?

P-n junctions based on vertically stacked single or few layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or…

Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matter interactions. However, most of light-controlled phenomena…

Mesoscale and Nanoscale Physics · Physics 2018-08-21 Yu Wang , Erfu Liu , Anyuan Gao , Tianjun Cao , Mingsheng Long , Chen Pan , Lili Zhang , Junwen Zeng , Chenyu Wang , Weida Hu , Shi-Jun Liang , Feng Miao

Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD based devices to light generates photo-carriers resulting in an enhanced conductivity, which…

Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to…

Ultra-thin planar heterostructures of graphene and other two-dimensional crystals have recently attracted much interest. Very high carrier mobility in a graphene-on-boron nitride assembly is now well-established, but it has been anticipated…

Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by a…

Atomically thin transition metal dichalcogenides (TMDs) are ideal candidates for ultrathin optoelectronics that is flexible and semitransparent. Photodetectors based on TMDs show remarkable performance, with responsivity and detectivity…

Mesoscale and Nanoscale Physics · Physics 2019-04-23 Peize Han , Eli Adler , Yijing Liu , Luke St. Marie , Abdel El Fatimy , Scott Melis , Edward Van Keuren , Paola Barbara

Van der Waals (vdW) heterostructures of two-dimensional (2D) materials have become a rich playground for the exploration of correlated quantum phases, and recent studies have begun to probe their non-equilibrium dynamics under femtosecond…

Photodetectors based on two-dimensional (2D) atomically thin semiconductors suffer from low light absorption, limiting their potential for practical applications. In this work, we demonstrate a high-performance MoS2 phototransistors by…

Mesoscale and Nanoscale Physics · Physics 2024-08-09 Seyed Saleh Mousavi Khaleghi , Jianyong Wei , Yumeng Liu , Zhengfang Fan , Kai Li , Kenneth B. Crozier , Yaping Dan

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present…

Owing to its atomically thin thickness, layer-dependent tunable band gap, flexibility, and CMOS compatibility, MoS$_2$ is a promising candidate for photodetection. However, mono-layer MoS2-based photodetectors typically show poor…

Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to…

Mesoscale and Nanoscale Physics · Physics 2014-06-24 Surajit Sutar , Pratik Agnihotri , Everett Comfort , T. Taniguchi , K. Watanabe , Ji Ung Lee

Current portable memory device relies heavily on flash memory technology for its implementation. New generation of non-volatile memory is likely to replace floating gates, charge-trapping memory currently still suffering from inadequate…

Applied Physics · Physics 2023-03-27 Yifan Hu

This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response…

A new phototransistor based on the mechanically-exfoliated single-layer MoS2 nanosheet is fabricated and its light-induced electric properties are investigated in details. Photocurrent generated from the phototransistor is solely determined…

Materials Science · Physics 2013-10-31 Zongyou Yin , Hai Li , Hong Li , Lin Jiang , Yumeng Shi , Yinghui Sun , Gang Lu , Qing Zhang , Xiaodong Chen , Hua Zhang

The studies of the nonlinear optical (NLO) properties of the transition metal dichalcogenides (TMDs) coupled with photoactive particles, plasmonic nanocavities, waveguides, and metamaterials remain in their infancy. This study investigates…

We propose an all-photonic, non-volatile memory and processing element based on phase-change thin-films deposited onto nanophotonic waveguides. Using photonic microring resonators partially covered with Ge2Sb2Te5 (GST) multi-level memory…

Optics · Physics 2015-06-11 Wolfram Pernice , Harish Bhaskaran

We demonstrate an all solid state semiconductor device, based on epitaxial single crystalline metal halide perovskites, enabling reversible control of a perovskite photoluminescence with a gate voltage. Fundamentally distinct from…

Materials Science · Physics 2026-03-27 Vladimir Bruevich , Dmitry Maslennikov , Beier Hu , Artem A. Bakulin , Vitaly Podzorov