Related papers: Potential for Improved Time Resolution Using Very …
Ultrafast electron diffraction (UED) instruments typically operate at kHz or lower repetition rates and rely on indirect detection of electrons. However, these experiments encounter limitations because they are required to use electron…
The proven radiation hardness of silicon 3D devices up to fluences of $1 {\times} 10^{17}$ $n_{eq}/cm^{2}$ makes them an excellent choice for next generation trackers, providing < 10 ${\mu}m$ position resolution at a high multiplicity…
Superconducting nanowire single photon detectors (SNSPDs) emerged in the last decade as a disruptive technology that features performance characteristics, such as high sensitivity, dynamic range and temporal accuracy, which are ideally…
The detectors with $\mathcal{O}$(10) $\mu$m spatial resolution and $\mathcal{O}$(10) ps timing resolution construct powerful particle trackers for future hadron or lepton collider experiments. LGAD: Low-Gain-Avalanche-Diode is a…
The SuperFGD will be a part of the ND280 near detector of the T2K and Hyper Kamiokande projects, that will help to reduce systematic uncertainties related with neutrino flux and cross-section modeling. The upgraded ND280 will be able to…
Forward proton spectrometers at high-energy proton colliders rely on precision timing to discriminate signal from background. Silicon low gain avalanche diodes (LGADs) are a candidate for future timing detectors in these systems. A major…
We present results for time resolution studies performed on three different scintillating plastics and two silicon photo-multipliers. These studies are intended to determine whether scintillating plastic/silicon photo-multiplier systems can…
Low-Gain Avalanche Detectors (LGADs) are characterized by a fast rise time (500 ps) and extremely good time resolution (down to 17 ps). The intrinsic low granularity of LGADs and the large power consumption of readout chips for precise…
Low Gain Avalanche Diodes (LGADs) are thin (20-50 $\mu m$)silicon di ode sensors with modest internal gain (typically 5 to 50) and exceptional time resolution (17 $ps$ to 50 $ps$). However, the granularity of such devices is limited to the…
We developed a nanoplasmonic sensor platform employing the extraordinary optical properties of one-dimensional nanogratings patterned on 30nm-thick ultrathin Ag films. Excitation of Fano resonances in the ultrathin Ag nanogratings results…
A highly sensitive photodetection system with a detection limit of 1 photon/s was developed. This system uses a commercially available 200-mm-diameter silicon avalanche photodiode (APD) and an in-house-developed ultralow-noise readout…
In this paper the efficiency of direct charged particle detection with different Silicon PhotoMultiplier (SiPM) sensors has been measured to be close to 100%. Time resolution of about 20 ps has also been confirmed for sensors with an active…
RSDs (Resistive AC-Coupled Silicon Detectors) are n-in-p silicon sensors based on the LGAD (Low-Gain Avalanche Diode) technology, featuring a continuous gain layer over the whole sensor area. The truly innovative feature of these sensors is…
Time-tagging units and coincidence detectors are used in many scientific research fields. The required timing resolution and number of input channels are varying, but some emerging experiments in the field of quantum optics require up to 32…
Resistive AC-coupled Silicon Detectors (RSDs) are silicon sensors which provide high temporal and spatial resolution. The RSD is a candidate sensor to be used in future tracking detectors with the objective of obtaining '4D' tracking, where…
Small-pitch 3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC pixel detector upgrades. Prototype 3D sensors with pixel sizes of 50$\times$50 and 25$\times$100 $\mu$m$^{2}$…
We derive expressions for the time resolution of silicon detectors, using the Landau theory and a PAI model for describing the charge deposit of high energy particles. First we use the centroid time of the induced signal and derive analytic…
In this report, we derive analytical expressions for the time resolution limits of standard silicon sensors, LGADs, and 3D trench sensors. We separately examine the effects of Landau fluctuations and electronic noise. To analyze Landau…
Silicon photodetectors are highly desirable for their CMOS compatibility, low cost, and fast response speed. However, their application the infrared (IR) is limited by silicon's intrinsic bandgap, which restricts its detection to photons…
Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this…