Related papers: Spin pumping and inverse spin Hall effect in iridi…
High spin to charge conversion efficiency is the requirement for the spintronics devices which is governed by spin pumping and inverse spin Hall effect (ISHE). In last one decade, ISHE and spin pumping are heavily investigated in…
The dependence of the spin-pumping effect on the yttrium iron garnet (Y3Fe5O12, YIG) thickness detected by the inverse spin Hall effect (ISHE) has been investigated quantitatively. Due to the spin-pumping effect driven by the magnetization…
Pure spin currents generated by spin pumping in ferromagnet/nonmagnet (FM/NM) bilayers produce inverse spin Hall effect (ISHE) voltages in the NM, from which spin pumping and transport characteristics of the NM can be extracted. Due to its…
Complex oxide heterostructures are hot candidates for post CMOS multi-functional devices. Especially in spintronics applications ferromagnetic oxides may play a key role because they can exhibit extraordinary high spin polarization. Indeed,…
Devices based on a pure spin current (a flow of spin angular momentum) have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, an…
Pure spin current based research is mostly focused on ferromagnet (FM)/heavy metal (HM) system. Because of the high spin orbit coupling (SOC) these HMs exhibit short spin diffusion length and therefore possess challenges for device…
Exploration of spin-currents in organic semiconductors (OSECs) induced by resonant microwave absorption in ferromagnetic substrates has been of great interest for potential spintronics applications. Due to the inherently weak spin-orbit…
We report on the determination of the spin Hall angle and the identification of the role of the interface roughness for the inverse spin Hall effect (ISHE) in ultra-clean, defect-reduced epitaxial Pt films. By applying vector network…
The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin…
We report an intrinsic form of the inverse spin Hall effect (ISHE) in ferromagnetic (FM) metal with Rashba spin orbit coupling (RSOC), which is driven by a normal charge current. Unlike the conventional form, the ISHE can be induced without…
It is generally believed that spin-orbit coupling (SOC) follows Z4 (atomic number) dependence and becomes significant only in heavy elements. Consequently, SOC in 3d transition metals should be negligible given their small Z. Using dynamic…
The influence of hydrogen gas absorption by the Pd layer of bi-layered films containing Pd and Co layers on the inverse Spin Hall Effect (iSHE) in the material is measured. iSHE is driven by ferromagnetic resonance in the cobalt layer. In…
We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch…
We experimentally show that exchange magnons can be detected using a combination of spin pumping and inverse spin-Hall effect (iSHE) proving its wavelength integrating capability down to the sub-micrometer scale. The magnons were injected…
We theoretically investigate the mechanism to generate large intrinsic spin Hall effect in iridates or more broadly in 5d transition metal oxides with strong spin-orbit coupling. We demonstrate such a possibility by taking the example of…
Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling and the existence of spin-textured topological surface states which could be potentially exploited for spintronics. Here, we investigate spin…
We study spin pumping in a $\mathrm{Y_3Fe_5O_{12}(YIG)/Pt/Ni_{81}Fe_{19}(Py)}$ trilayer film by means of the inverse spin Hall effect (ISHE). When the ferromagnets are not excited simultaneously by a microwave, ISHE-induced voltage is of…
An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the…
Iridium is a very promising material for spintronic applications due to its interesting magnetic properties such as large RKKY exchange coupling as well as its large spin-orbit coupling value. Ir is for instance used as a spacer layer for…
Our investigation reveals a groundbreaking discovery of a negative inverse orbital Hall effect (IOHE) in Ge thin films. We employed the innovative orbital pumping technique where spin-orbital coupled current is injected into Ge films using…