Related papers: Temperature dependence of the optical properties o…
Thin colloidal crystals (or synthetic opals) composed of Stober silica spheres typically develop cracks when they are utilized to obtain photonic band gap crystals (or inverted opals). We find that by sintering the silica spheres prior to…
Tunable dielectric meta-surface nanostructures offer incredible performance in optical application due to their extraordinary tunability of the polarization and engineering the dispersion of light with low loss in infrared range. In this…
Nanolaminated materials exhibit characteristic magnetic, mechanical, and thermoelectric properties, with large contemporary scientific and technological interest. Here, we report on the anisotropic Seebeck coefficient in nanolaminated…
Silicon photonic devices fundamental to high-density wavelength-division multiplexed (DWDM) optical links and photonic switching networks, such as resonant modulators and Mach-Zehnder interferometers (MZIs), are highly sensitive to…
The cooling of two-dimensional electrons in silicon-metal-oxide semiconductor field effect transistors is studied experimentally. Cooling to the lattice is found to be more effective than expected from the bulk electron-phonon coupling in…
The neutral divacancy and the negatively charged nitrogen-vacancy defects in 4H-silicon carbide (SiC) are two of the most prominent candidates for functioning as room-temperature quantum bits (qubits) with telecommunication-wavelength…
Silicon-nitride-on-insulator photonic circuits have seen tremendous advances in many applications, such as on-chip frequency combs, Lidar, telecommunications, and spectroscopy. So far, the best film quality has been achieved with low…
Phonons are envisioned as coherent intermediaries between different types of quantum systems. Engineered nanoscale devices such as optomechanical crystals (OMCs) provide a platform to utilize phonons as quantum information carriers. Here we…
The restricted optical sum rule and its dependence on the temperature, a superconducting gap and the cutoff energy have been investigated. As known this sum rule depends on the cutoff energy and the relaxation rate even for a homogeneous…
We study the electronic and optical properties of strained single-layer SnC in the density functional theory (DFT) and tight-binding models. We extract the hopping parameters tight-binding Hamiltonian for monolayer SnC by considering the…
As it is known from visible light experiments, silicon under femtosecond pulse irradiation can undergo the so-called 'nonthermal melting' if the density of electrons excited from the valence to the conduction band overcomes a certain…
Inelastic light scattering spectra of Bi_2Se_3 and Sb_2Te_3 single crystals have been measured over the temperature range from 5 K to 300 K. The temperature dependence of dominant A^{2}_{1g} phonons shows similar behavior in both materials.…
The possibility of controlling the optical transition probability between neighbouring silicon nanoclusters (Si-NCs) constitutes nowadays an attractive prospect in nanophotonics and photovoltaics. In this work, by means of theoretical…
We report Raman spectra measurements on a MoS2 monolayer supported on SiO2 as a function of temperature. Unlike in previous studies, the positions of the two main Raman modes, E2g1 and A1g exhibited nonlinear temperature dependence.…
Here we investigate the temperature-dependent non-Markovian dynamics of the SiV^- center in diamond, focusing on the roles of low- and high-frequency quasi-localized phonon modes. Low-frequency phonons exhibit stronger electron-phonon…
We present suspended heater structures fabricated in a standard C- and O-band silicon (Si) photonics platform that can achieve sufficiently high local temperatures to induce effective refractive index trimming of Si and silicon nitride…
Zero-dimensional nanocrystals, as obtained by chemical synthesis, offer a broad range of applications, as their spectrum and thus their excitation gap can be tailored by variation of their size. Additionally, nanocrystals of the type ABC…
MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently…
Given the importance of incorporating various superconducting materials to device fabrication or substrate development, studying the interface for possible interactions is warranted. In this work, NbN films sputter-deposited on 4H-SiC were…
We present a fully first-principles method for superconducting thin films. The layer dependent phonon spectrum is calculated to determine the layer dependence of the electron-phonon coupling for such systems, which is coupled to the…