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Doping mobile carriers into ordinary semiconductors such as Si, GaAs, and ZnO was the enabling step in the electronic and optoelectronic revolutions. The recent emergence of a class of "Quantum Materials", where uniquely quantum…
The oscillatory voltage dependence of the conductance of a quantum point contact in the presence of a single point-like defect has been analyzed theoretically. Such signals are detectable and may be exploited to obtain information on defect…
A non-parametric complementary ensemble empirical mode decomposition (NPCEEMD) is proposed for identifying bearing defects using weak features. NPCEEMD is non-parametric because, unlike existing decomposition methods such as ensemble…
The nanoscale charge environment critically influences semiconductor physics and device performance. While conventional bulk characterization techniques provide volume-averaged defect properties, they lack the spatial resolution to resolve…
The topic of superconductivity in strongly disordered materials has attracted a significant attention. In particular vivid debates are related to the subject of intrinsic spatial inhomogeneity responsible for non-BCS relation between the…
Quantum technology has been rapidly growing due to its potential revolutionary applications. In particular, superconducting qubits provide a strong light-matter interaction as required for quantum computation and in principle can be scaled…
The method of angular photonic correlations of spontaneous emission is introduced as an experimental, purely optical scheme to characterize disorder in semiconductor nanostructures. The theoretical expression for the angular correlations is…
Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated…
Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and…
We investigate neutron--antineutron oscillations of ultracold neutrons in a storage bottle represented by a one-dimensional potential. The experimental sensitivity is determined by the annihilation rate of antineutrons. Its dependence on…
The investigation of the electronic properties of semiconductors is inherently challenging due to the ensemble averaging of fundamentals to transport measurements (i.e., resistivity, Hall, and Seebeck coefficient measurements). Here, we…
Unidirectional reflectionlessness is investigated in a waveguide quantum electrodynamics system that consists of a cavity and a $\Lambda$-type three-level quantum dot coupled to a one-dimensional plasmonic waveguide. Analytical expressions…
The interrelationship between a material's structure and its properties lies at the heart of materials-related research. Finding how the changes of one affect the other is of primary importance in theoretical and computational materials…
Most mechanical resonators are treated as simple linear oscillators. Nonlinearity in the resonance behavior of nanoelectromechanical systems (NEMS) has only lately attracted significant interest. Most recently, cubic-order nonlinearity has…
For the last years spin effects in semiconductors have been of great interest not only in the context of solid state physics, but also for their potential usage in technology. In this paper we give a short review of spintronic materials, in…
In the literature, the study of electron transport in quantum devices is mainly devoted to DC properties. The fluctuations of the electrical current around these DC values, the so-called quantum noise, are much less analyzed. The…
Quantum decoherence plays a pivotal role in the dynamical description of the quantum-to-classical transition and is the main impediment to the realization of devices for quantum information processing. This paper gives an overview of the…
In the scale-up of quantum computers, the framework underpinning fault-tolerance generally relies on the strong assumption that environmental noise affecting qubit logic is uncorrelated (Markovian). However, as physical devices progress…
An analytic approach to the electron transport phenomena in molecular devices is presented. Analyzed devices are composed of organic molecules attached to the two semi-infinite electrodes. Molecular system is described within the…
Strong coupling between electronic and mechanical degrees of freedom is a basic requirement for the operation of any nanoelectromechanical device. In this Review we consider such devices and in particular investigate the properties of small…