Characterization of Disorder in Semiconductors via Single-Photon Interferometry
Disordered Systems and Neural Networks
2007-05-23 v1
Abstract
The method of angular photonic correlations of spontaneous emission is introduced as an experimental, purely optical scheme to characterize disorder in semiconductor nanostructures. The theoretical expression for the angular correlations is derived and numerically evaluated for a model system. The results demonstrate how the proposed experimental method yields direct information about the spatial distribution of the relevant states and thus on the disorder present in the system.
Keywords
Cite
@article{arxiv.cond-mat/0611411,
title = {Characterization of Disorder in Semiconductors via Single-Photon Interferometry},
author = {P. Bozsoki and P. Thomas and M. Kira and W. Hoyer and T. Meier and S. W. Koch and K. Maschke and I. Varga and H. Stolz},
journal= {arXiv preprint arXiv:cond-mat/0611411},
year = {2007}
}
Comments
4 pages, 2 figures, accepted for PRL