Related papers: Improving thermal stability of MnN/CoFeB exchange …
Exchange bias in ferromagnetic/antiferromagnetic systems can be explained in terms of various interfacial phenomena. Among these spin glass frustration can affect the magnetic properties in exchange bias systems. Here we have studied a…
We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bilayer and trilayer heterostructures. An exchange spring model…
We have investigated the effect of temperature on magnetic properties of Bi$_{0.9}$Gd$_{0.1}$Fe$_{1-x}$Ti$_x$O$_3$ (x = 0.00-0.20) multiferroic system. Unexpectedly, the coercive fields ($H_{c}$) of this multiferroic system increased with…
Ferromagnetic (Fe or Fe20Ni80) and antiferromagnetic (NiO) phases were deformed by high pressure torsion, a severe plastic deformation technique, to manufacture bulk sized nanocomposites and demonstrate an exchange bias, which has been…
We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer,…
We report on the demonstration and investigation of Ta2O5 as high-\k{appa} dielectric for InAlN/GaN-MOS HEMT-on-Si. Ta2O5 of thickness 24 nm and dielectric constant ~ 30 was sputter deposited on InAlN/GaN HEMT and was investigated for…
We have put into evidence the existence of an antiferromagnetic coupling between iron epilayers separated by a ZnSe crystalline semiconductor. The effect has been observed for ZnSe spacers thinner than 4 nm at room-temperature. The coupling…
We report high-resolution X-ray Absorption Near Edge Structure (XANES) measurements at the Mn K-edge as a function of temperature, for La$_{1-x}$Ca$_x$MnO$_3$ samples, with a focus mainly on the pre-edge region. Small peaks labeled…
We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires…
In epitaxially grown CoO(111)/Co(111) bilayers we have determined the blocking temperature distribution f(Tb), which is correlated with the antiferromagnetic domain size (z) distribution f(z). The latter is probed by reversing…
Superconducting coplanar waveguide resonators are essential components in quantum processors, where their internal quality factor (Qi) constrains qubit coherence and readout fidelity. In niobium devices, microwave losses at millikelvin…
The stability of Al-Mn transition edge sensor (TES) bolometers is studied as we vary the engineered TES transition, heat capacity, and/or coupling between the heat capacity and TES. We present thermal structure measurements of each of the…
The metastable layered compound MnBi2Te4 is the first experimentally realized intrinsic antiferromagnetic topological insulator, predicted to host the quantum anomalous Hall effect at high temperatures upon exfoliation to atomically thin…
We report the superconducting transition temperature $T_c$ vs. thickness $d_F$ of Ferromagnet/Superconductor (F/S) bilayers, where F is a strong $3d$ ferromagnet (Ni, Ni$_{0.81}$Fe$_{0.19}$ (Permalloy), Co$_{0.5}$Fe$_{0.5}$) and S = Nb,…
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…
Experimental and theoretical studies of unusual polar, dielectric and magnetic properties of room temperature multiferroics, such as perovskites Pb(Fe$_{1/2}$Nb$_{1/2}$)O$_3$ (PFN) and Pb(Fe$_{1/2}$Ta$_{1/2}$)O$_3$ (PFT), are very…
Large thermal hysteresis in the MnFe(P, Si, B) system hinders the heat exchange rate and thus limits the magnetocaloric applications at high frequencies. Substitution of Mn by V in Mn1-xVxFe0.95P0.593Si0.33B0.077 and…
Transition metal dichalcogenides (TMDs) constitute an intriguing platform for studying charge-ordered states including conventional and generalized Wigner crystals as well as Mott insulating states. In this work, we combine a phonon mode…
We present the effect of temperature on the switching characteristics of a bistable nonlinear nanomechanical beam. At MHz-range frequencies, we find that it is possible to controllably change the state of the system between two stable…
AlN-GaN heterostructures are central to high-power and high-frequency electronics, including RF devices, power converters, and AI accelerators. An intermediate Al1-xGaxN (AlGaN) layer is often present, either unintentionally during growth…